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APT75F50L Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APT75F50L
Description  N-Channel FREDFET
Download  4 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT75F50L Datasheet(HTML) 2 Page - Microsemi Corporation

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Static Characteristics
TJ=25°Cunlessotherwisespecified
Dynamic Characteristics
TJ=25°Cunlessotherwisespecified
Source-Drain Diode Characteristics
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T
J = 25°C, L = 2.31mH, RG = 25Ω, IAS = 37A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 C
o(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 C
o(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
V
DS less than V(BR)DSS, use this equation: Co(er) = -1.65E-7/VDS^2 + 5.51E-8/VDS + 2.03E-10.
6 R
G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemireservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
G
D
S
Unit
V
V/°C
V
mV/°C
µA
nA
Unit
S
pF
nC
ns
Unit
A
V
ns
µC
A
V/ns
Min
Typ
Max
500
0.60
0.064
0.075
2.5
4
5
-10
250
1000
±100
Min
Typ
Max
55
11600
160
1250
725
365
290
65
130
45
55
120
39
Min
Typ
Max
75
230
1.0
310
570
1.48
3.85
11.3
16.6
20
Test Conditions
V
GS = 0V, ID = 250µA
Reference to 25°C, I
D = 250µA
V
GS = 10V, ID = 37A
V
GS = VDS, ID = 2.5mA
V
DS = 500V
T
J = 25°C
V
GS = 0V
T
J = 125°C
V
GS = ±30V
Test Conditions
V
DS = 50V, ID = 37A
V
GS = 0V, VDS = 25V
f = 1MHz
V
GS = 0V, VDS = 0V to 333V
V
GS = 0 to 10V, ID = 37A,
V
DS = 250V
ResistiveSwitching
V
DD = 333V, ID = 37A
R
G = 2.2Ω
6
, V
GG = 15V
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
I
SD = 37A, TJ = 25°C, VGS = 0V
T
J = 25°C
T
J = 125°C
I
SD = 37A
3
T
J = 25°C
V
DD = 100V
T
J = 125°C
di
SD/dt = 100A/µs
T
J = 25°C
T
J = 125°C
I
SD ≤ 37A, di/dt ≤1000A/µs, VDD = 333V,
T
J = 125°C
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
Symbol
V
BR(DSS)
∆V
BR(DSS)/∆TJ
R
DS(on)
V
GS(th)
∆V
GS(th)/∆TJ
I
DSS
I
GSS
Symbol
g
fs
C
iss
C
rss
C
oss
C
o(cr)
4
C
o(er)
5
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
rrm
dv/dt
APT75F50B2_L


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