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APT75F50L Datasheet(PDF) 2 Page - Microsemi Corporation |
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APT75F50L Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 4 page Static Characteristics TJ=25°Cunlessotherwisespecified Dynamic Characteristics TJ=25°Cunlessotherwisespecified Source-Drain Diode Characteristics 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T J = 25°C, L = 2.31mH, RG = 25Ω, IAS = 37A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 C o(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 C o(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of V DS less than V(BR)DSS, use this equation: Co(er) = -1.65E-7/VDS^2 + 5.51E-8/VDS + 2.03E-10. 6 R G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemireservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein. G D S Unit V V/°C Ω V mV/°C µA nA Unit S pF nC ns Unit A V ns µC A V/ns Min Typ Max 500 0.60 0.064 0.075 2.5 4 5 -10 250 1000 ±100 Min Typ Max 55 11600 160 1250 725 365 290 65 130 45 55 120 39 Min Typ Max 75 230 1.0 310 570 1.48 3.85 11.3 16.6 20 Test Conditions V GS = 0V, ID = 250µA Reference to 25°C, I D = 250µA V GS = 10V, ID = 37A V GS = VDS, ID = 2.5mA V DS = 500V T J = 25°C V GS = 0V T J = 125°C V GS = ±30V Test Conditions V DS = 50V, ID = 37A V GS = 0V, VDS = 25V f = 1MHz V GS = 0V, VDS = 0V to 333V V GS = 0 to 10V, ID = 37A, V DS = 250V ResistiveSwitching V DD = 333V, ID = 37A R G = 2.2Ω 6 , V GG = 15V Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) I SD = 37A, TJ = 25°C, VGS = 0V T J = 25°C T J = 125°C I SD = 37A 3 T J = 25°C V DD = 100V T J = 125°C di SD/dt = 100A/µs T J = 25°C T J = 125°C I SD ≤ 37A, di/dt ≤1000A/µs, VDD = 333V, T J = 125°C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt Symbol V BR(DSS) ∆V BR(DSS)/∆TJ R DS(on) V GS(th) ∆V GS(th)/∆TJ I DSS I GSS Symbol g fs C iss C rss C oss C o(cr) 4 C o(er) 5 Q g Q gs Q gd t d(on) t r t d(off) t f Symbol I S I SM V SD t rr Q rr I rrm dv/dt APT75F50B2_L |
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