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APTGF30TL60T3G Datasheet(PDF) 8 Page - Microsemi Corporation |
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APTGF30TL60T3G Datasheet(HTML) 8 Page - Microsemi Corporation |
8 / 8 page APTGF30TL60T3G www.microsemi.com 8- 8 CR1 to CR6 Typical performance curve Forward Characteristic of diode TJ=25°C TJ=125°C 0 20 40 60 80 0.0 0.4 0.8 1.2 1.6 2.0 2.4 VF (V) Energy losses vs Collector Current 0 0.25 0.5 0.75 1 0 2040 6080 IC (A) VCE = 400V VGE = 15V RG = 2.5Ω TJ = 125°C 0 0.25 0.5 0.75 1 02 46 8 10 Gate Resistance (ohms) VCE = 400V VGE =15V IC = 30A TJ = 125°C Switching Energy Losses vs Gate Resistance Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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