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APTGF75DH120T3G Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTGF75DH120T3G Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 5 page  APTGF75DH120T3G www.microsemi.com 2- 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 250 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 500 µA Tj = 25°C 3.2 3.7 VCE(sat) Collector Emitter saturation Voltage VGE =15V IC = 75A Tj = 125°C 3.9 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 2.5 mA 4.5 6.5 V IGES Gate – Emitter Leakage Current VGE = ±20V, VCE = 0V ±500 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 5.1 Coes Output Capacitance 0.7 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 0.4 nF QG Gate charge VGE=±15V, IC=75A VCE=600V 0.8 µC Td(on) Turn-on Delay Time 120 Tr Rise Time 50 Td(off) Turn-off Delay Time 310 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 75A RG = 7.5Ω 20 ns Td(on) Turn-on Delay Time 130 Tr Rise Time 60 Td(off) Turn-off Delay Time 360 Tf Fall Time Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 75A RG = 7.5Ω 30 ns Eon Turn-on Switching Energy Tj = 125°C 9 Eoff Turn-off Switching Energy VGE = ±15V VBus = 600V IC = 75A RG = 7.5Ω Tj = 125°C 4 mJ Isc Short Circuit data VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C 450 A Diode ratings and characteristics (CR2 & CR3) Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 100 IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 500 µA IF DC Forward Current Tc = 80°C 60 A IF = 60A 2.5 3 IF = 120A 3 VF Diode Forward Voltage IF = 60A Tj = 125°C 1.8 V Tj = 25°C 265 trr Reverse Recovery Time Tj = 125°C 350 ns Tj = 25°C 560 Qrr Reverse Recovery Charge IF = 60A VR = 800V di/dt =200A/µs Tj = 125°C 2890 nC CR1 & CR4 are IGBT protection diodes only |
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