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APTGL40X120T3G Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APTGL40X120T3G
Description  3 Phase bridge Trench Field Stop IGBT4 Power Module
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGL40X120T3G Datasheet(HTML) 2 Page - Microsemi Corporation

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APTGL40X120T3G
www.microsemi.com
2- 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
250
µA
Tj = 25°C
1.85
2.25
VCE(sat)
Collector Emitter saturation Voltage
VGE = 15V
IC = 35A
Tj = 150°C
2.25
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 1.2mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
1950
Coes
Output Capacitance
155
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
115
pF
QG
Gate charge
VGE= ±15V ; VCE=600V
IC=35A
0.27
µC
Td(on)
Turn-on Delay Time
130
Tr
Rise Time
20
Td(off)
Turn-off Delay Time
300
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VCE = 600V
IC = 35A
RG = 12Ω
45
ns
Td(on)
Turn-on Delay Time
150
Tr
Rise Time
35
Td(off)
Turn-off Delay Time
350
Tf
Fall Time
Inductive Switching (150°C)
VGE = ±15V
VCE = 600V
IC = 35A
RG = 12Ω
80
ns
TJ = 25°C
2.6
Eon
Turn-on Switching Energy
TJ = 150°C
4
mJ
TJ = 25°C
2
Eoff
Turn-off Switching Energy
VGE = ±15V
VCE = 600V
IC = 35A
RG = 12Ω
TJ = 150°C
3
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 900V
tp ≤10µs ; Tj = 150°C
140
A
Reverse diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
100
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 150°C
500
µA
IF
DC Forward Current
Tc = 80°C
30
A
IF = 30A
2.6
3.1
IF = 60A
3.2
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.8
V
Tj = 25°C
300
trr
Reverse Recovery Time
Tj = 125°C
380
ns
Tj = 25°C
360
Qrr
Reverse Recovery Charge
IF = 30A
VR = 800V
di/dt =200A/µs
Tj = 125°C
1700
nC


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