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APTGT50TL60T3G Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTGT50TL60T3G Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 7 page  APTGT50TL60T3G www.microsemi.com 2- 7 All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 600V 250 µA Tj = 25°C 1.5 1.9 VCE(sat) Collector Emitter Saturation Voltage VGE =15V IC = 50A Tj = 150°C 1.7 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 600µA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 600 nA Q1 to Q4 Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 3150 Coes Output Capacitance 200 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 95 pF QG Gate charge VGE=±15V, IC=50A VCE=300V 0.5 µC Td(on) Turn-on Delay Time 110 Tr Rise Time 45 Td(off) Turn-off Delay Time 200 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2Ω 40 ns Td(on) Turn-on Delay Time 120 Tr Rise Time 50 Td(off) Turn-off Delay Time 250 Tf Fall Time Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2Ω 60 ns Tj = 25°C 0.3 Eon Turn-on Switching Energy Tj = 150°C 0.43 mJ Tj = 25°C 1.35 Eoff Turn-off Switching Energy VGE = ±15V VBus = 300V IC = 50A RG = 8.2Ω Tj = 150°C 1.75 mJ Isc Short Circuit data VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C 250 A RthJC Junction to Case Thermal Resistance 0.85 °C/W |
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