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APTGT50TL601G Datasheet(PDF) 7 Page - Microsemi Corporation |
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APTGT50TL601G Datasheet(HTML) 7 Page - Microsemi Corporation |
7 / 7 page APTGT50TL601G www.microsemi.com 7- 7 CR5 & CR6 Typical performance curve Energy losses vs Collector Current 0 0.5 1 1.5 0 2040 6080 100 IF (A) VCE = 300V VGE = 15V RG = 8.2Ω TJ = 150°C 0 0.2 0.4 0.6 0.8 1 1.2 5 15 253545 5565 Gate Resistance (ohms) VCE = 300V VGE =15V IC = 50A TJ = 150°C Switching Energy Losses vs Gate Resistance maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds Forward Characteristic of diode TJ=25°C TJ=150°C 0 20 40 60 80 100 0 0.4 0.8 1.2 1.6 2 2.4 VF (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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