APTGT75DH120T3G datasheet(4/5 Pages) MICROSEMI

Part #	APTGT75DH120T3G

Description	Asymmetrical - Bridge Fast Trench Field Stop IGBT Power Module

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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APTGT75DH120T3G

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Typical Performance Curve

Output Characteristics (VGE=15V)

TJ=25°C

TJ=125°C

0

25

50

75

100

125

150

01

234

VCE (V)

Output Characteristics

VGE=15V

VGE=13V

VGE=17V

VGE=9V

0

25

50

75

100

125

150

0

1234

VCE (V)

TJ = 125°C

Transfert Characteristics

TJ=25°C

TJ=125°C

0

25

50

75

100

125

150

5

6

7

8

9

10

11

12

VGE (V)

Energy losses vs Collector Current

Eon

Eoff

Er

0

2.5

5

7.5

10

12.5

15

17.5

0

25

50

75

100

125

150

IC (A)

VCE = 600V

VGE = 15V

RG = 4.7Ω

TJ = 125°C

Eon

Eoff

Er

0

2

4

6

8

10

12

14

16

0

4

8

12

1620

2428

32

Gate Resistance (ohms)

VCE = 600V

VGE =15V

IC = 75A

TJ = 125°C

Switching Energy Losses vs Gate Resistance

Reverse Bias Safe Operating Area

0

25

50

75

100

125

150

175

0

400

800

1200

1600

VCE (V)

VGE=15V

TJ=125°C

RG=4.7Ω

maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.00001

0.0001

0.001

0.01

0.1

1

10

rectangular Pulse Duration (Seconds)

IGBT

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APTGT75DH120T3G Datasheet(PDF) 4 Page - Microsemi Corporation

APTGT75DH120T3G Datasheet(HTML) 4 Page - Microsemi Corporation

Similar Part No. - APTGT75DH120T3G

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