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WBDDSS4-B-01-1002-CD Datasheet(PDF) 1 Page - IRC - a TT electronics Company. |
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WBDDSS4-B-01-1002-CD Datasheet(HTML) 1 Page - IRC - a TT electronics Company. |
1 / 4 page General Note IRC reserves the right to make changes in product specification without notice or liability. All information is subject to IRC’s own data and is considered accurate at time of going to print. A subsidiary of TT electronics plc © IRC Advanced Film Division Telephone: 361 992 7900 • Facsimile: 361 992 3377 • Website: www.irctt.com • 4222 South Staples Street • Corpus Christi Texas 78411 USA Wire Bondable Resistor Network Arrays • Absolute tolerances to ±0.1% • Tight TCR tracking to ±5ppm/°C • Ratio match tolerances to ±0.05% • Ultra-stable tantalum nitride resistors Chip Network Array Series IRC’s TaNSil® network array resistors are ideally suited for applications that demand a small footprint. The small wire bondable chip package provides higher component density, lower resistor cost and high reliability. The tantalum nitride film system on silicon provides precision tolerance, exceptional TCR tracking and low cost. Excellent performance in harsh, humid environments is a trademark of IRC’s self-passivating TaNSil® resistor film. For applications requiring high performance resistor networks in a low cost, wire bondable package, specify IRC network array die. WBC Series Issue January 2009 Sheet 1 of 4 Absolute TCR Commercial Code MIL Inspection Code* ±300ppm/°C 00 04 ±100ppm/°C 01 05 ±50ppm/°C 02 06 ±25ppm/°C 03 07 TCR/Inspection Code Table *Notes: Product supplied to Class H of MIL-PRF 38534 include 100% visual inspection Power Derating Data Electrical Data Isolated Bussed Resistance Range 10Ω to 2.5MΩ 10Ω to 1.25MΩ Absolute Tolerance to ±0.1% Ratio Tolerance to R1 to ±0.05% to ±0.1% Absolute TCR to ±25ppm/°C Tracking TCR to ±5ppm/°C Element Power Rating 100mW @ 70°C 50mW @ 70°C Package Power Rating 8-Pad 400mW @ 70°C 16-Pad 800mW @ 70°C 24-Pad 1.0W @ 70°C Rated Operating Voltage (not to exceed P x R) 100V Operating Temperature -55°C to +150°C Noise <-30dB Substrate Material Oxidized Silicon (10KÅ SiO 2 minimum) Substrate Thickness 0.016˝ ±0.001 (0.406mm ±0.01) Bond Pad Metallization Aluminum 10KÅ minimum Gold 15KÅ minimum Backside Silicon (gold available) Passivation Silicon Dioxide or Silicon Nitride √ |
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