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APT30GS60SRDQ2 Datasheet(PDF) 1 Page - Microsemi Corporation |
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APT30GS60SRDQ2 Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 7 page Absolute Maximum Ratings Thermal and Mechanical Characteristics Single die IGBT with separate DQ diode die Symbol Parameter Min Typ Max Unit PD Total Power Dissipation TC = @ 25°C - - 250 W RθJC Junction to Case Thermal Resistance IGBT - - 0.50 °C/W Diode 0.67 RθCS Case to Sink Thermal Resistance, Flat Greased Surface - 0.11 - TJ, TSTG Operating and Storage Junction Temperature Range -55 - 150 °C TL Soldering Temperature for 10 Seconds (1.6mm from case) - - 300 WT Package Weight - 0.22 - oz - 5.9 - g Torque Mounting Torque (TO-247), 6-32 M3 Screw - - 10 in·lbf - - 1.1 N·m Symbol Parameter Rating Unit I C1 Continuous Collector Current TC = @ 25°C 54 A I C2 Continuous Collector Current TC = @ 100°C 30 I CM Pulsed Collector Current 1 113 V GE Gate-Emitter Voltage ±30V V SSOA Switching Safe Operating Area 113 E AS Single Pulse Avalanche Energy 2 165 mJ t SC Short Circut Withstand Time 3 10 µs I F Diode Continuous Forward Current TC = 25°C 90 A TC = 100°C 55 I FRM Diode Max. Repetitive Forward Current 113 Typical Applications • ZVS Phase Shifted and other Full Bridge • Half Bridge • High Power PFC Boost • Welding • Induction heating • High Frequency SMPS Features • Fast Switching with low EMI • Very Low EOFF for Maximum Efficiency • Short circuit rated • Low Gate Charge • Tight parameter distribution • Easy paralleling • RoHS Compliant The Thunderbolt HS™ series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of 10µs make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi versions are packaged with a high speed, soft recovery DQ series diode. Thunderbolt® High Speed NPT IGBT with Anti-Parallel 'DQ' Diode TO-247 D3PAK APT30GS60BRDQ2(G) APT30GS60SRDQ2(G) 600V, 30A, VCE(ON) = 2.8V Typical APT30GS60BRDQ2(G) APT30GS60SRDQ2(G) Microsemi Website - http://www.microsemi.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed. |
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