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APT30GS60SRDQ2 Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APT30GS60SRDQ2
Description  Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT30GS60SRDQ2 Datasheet(HTML) 1 Page - Microsemi Corporation

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Absolute Maximum Ratings
Thermal and Mechanical Characteristics
Single die
IGBT with
separate DQ
diode die
Symbol Parameter
Min
Typ
Max
Unit
PD
Total Power Dissipation TC = @ 25°C
-
-
250
W
RθJC
Junction to Case Thermal Resistance
IGBT
-
-
0.50
°C/W
Diode
0.67
RθCS
Case to Sink Thermal Resistance, Flat Greased Surface
-
0.11
-
TJ, TSTG Operating and Storage Junction Temperature Range
-55
-
150
°C
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
-
-
300
WT
Package Weight
-
0.22
-
oz
-
5.9
-
g
Torque
Mounting Torque (TO-247), 6-32 M3 Screw
-
-
10
in·lbf
-
-
1.1
N·m
Symbol Parameter
Rating
Unit
I
C1
Continuous Collector Current TC = @ 25°C
54
A
I
C2
Continuous Collector Current TC = @ 100°C
30
I
CM
Pulsed Collector Current 1
113
V
GE
Gate-Emitter Voltage
±30V
V
SSOA
Switching Safe Operating Area
113
E
AS
Single Pulse Avalanche Energy 2
165
mJ
t
SC
Short Circut Withstand Time 3
10
µs
I
F
Diode Continuous Forward Current
TC = 25°C
90
A
TC = 100°C
55
I
FRM
Diode Max. Repetitive Forward Current
113
Typical Applications
• ZVS Phase Shifted and other Full Bridge
• Half Bridge
• High Power PFC Boost
• Welding
• Induction heating
• High Frequency SMPS
Features
• Fast Switching with low EMI
• Very Low EOFF for Maximum Efficiency
• Short circuit rated
• Low Gate Charge
• Tight parameter distribution
• Easy paralleling
• RoHS Compliant
The Thunderbolt HSseries is based on thin wafer non-punch through (NPT) technology similar to
the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low
switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET
performance but lower cost.
An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient
make it easy to parallel Thunderbolts HSIGBT's. Controlled slew rates result in very good noise
and oscillation immunity and low EMI. The short circuit duration rating of 10µs make these IGBT's
suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy
ruggedness. Combi versions are packaged with a high speed, soft recovery DQ series diode.
Thunderbolt® High Speed NPT IGBT with Anti-Parallel 'DQ' Diode
TO-247
D3PAK
APT30GS60BRDQ2(G)
APT30GS60SRDQ2(G)
600V, 30A, VCE(ON) = 2.8V Typical
APT30GS60BRDQ2(G)
APT30GS60SRDQ2(G)
Microsemi Website - http://www.microsemi.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.


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