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APT35GA90B Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APT35GA90B
Description  High Speed PT IGBT
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

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Dynamic Characteristics
TJ = 25°C unless otherwise specified
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 R
G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 E
on2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT35GA90B_S
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
C
ies
Input Capacitance
Capacitance
V
GE = 0V, VCE = 25V
f = 1MHz
1934
pF
C
oes
Output Capacitance
173
C
res
Reverse Transfer Capacitance
28
Q
g
3
Total Gate Charge
Gate Charge
V
GE = 15V
V
CE= 450V
I
C = 18A
84
nC
Q
ge
Gate-Emitter Charge
14
Q
gc
Gate- Collector Charge
34
SSOA
Switching Safe Operating Area
T
J = 150°C, RG = 10Ω
4
, V
GE = 15V,
L= 100uH, V
CE = 900V
105
A
t
d(on)
Turn-On Delay Time
Inductive Switching (25°C)
V
CC = 600V
V
GE = 15V
I
C = 18A
R
G = 10Ω
4
T
J = +25°C
12
ns
t
r
Current Rise Time
15
t
d(off)
Turn-Off Delay Time
104
t
f
Current Fall Time
86
E
on2
Turn-On Switching Energy
642
μJ
E
off
6
Turn-Off Switching Energy
382
t
d(on
Turn-On Delay Time
Inductive Switching (125°C)
V
CC = 600V
V
GE = 15V
I
C = 18A
R
G = 10Ω
4
T
J = +125°C
11
ns
t
r
Current Rise Time
14
t
d(off)
Turn-Off Delay Time
154
t
f
Current Fall Time
144
E
on2
Turn-On Switching Energy
1044
μJ
E
off
6
Turn-Off Switching Energy
907


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