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APT35GA90B Datasheet(PDF) 2 Page - Microsemi Corporation |
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APT35GA90B Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 6 page Dynamic Characteristics TJ = 25°C unless otherwise specified 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 R G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 E on2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT35GA90B_S Symbol Parameter Test Conditions Min Typ Max Unit C ies Input Capacitance Capacitance V GE = 0V, VCE = 25V f = 1MHz 1934 pF C oes Output Capacitance 173 C res Reverse Transfer Capacitance 28 Q g 3 Total Gate Charge Gate Charge V GE = 15V V CE= 450V I C = 18A 84 nC Q ge Gate-Emitter Charge 14 Q gc Gate- Collector Charge 34 SSOA Switching Safe Operating Area T J = 150°C, RG = 10Ω 4 , V GE = 15V, L= 100uH, V CE = 900V 105 A t d(on) Turn-On Delay Time Inductive Switching (25°C) V CC = 600V V GE = 15V I C = 18A R G = 10Ω 4 T J = +25°C 12 ns t r Current Rise Time 15 t d(off) Turn-Off Delay Time 104 t f Current Fall Time 86 E on2 Turn-On Switching Energy 642 μJ E off 6 Turn-Off Switching Energy 382 t d(on Turn-On Delay Time Inductive Switching (125°C) V CC = 600V V GE = 15V I C = 18A R G = 10Ω 4 T J = +125°C 11 ns t r Current Rise Time 14 t d(off) Turn-Off Delay Time 154 t f Current Fall Time 144 E on2 Turn-On Switching Energy 1044 μJ E off 6 Turn-Off Switching Energy 907 |
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