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APT36GA60S Datasheet(PDF) 4 Page - Microsemi Corporation

Part # APT36GA60S
Description  High Speed PT IGBT
Download  6 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT36GA60S Datasheet(HTML) 4 Page - Microsemi Corporation

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Typical Performance Curves
APT36GA60B_S
0
200
400
600
800
1000
1200
1400
1600
0
25
50
75
100
125
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
10
20
30
40
50
0
200
400
600
800
1000
1200
0
5
10
15
20
25
30
35
40
0
250
500
750
1000
1250
1500
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35 40
0
5
10
15
20
25
30
35
40
0
5
10 15 20 25 30 35 40
0
40
80
120
160
200
0
5
10
15
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25
30
35
40
10
12
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16
18
20
0
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10
15
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30
35
40
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 10Ω
L = 100μH
V
CE = 400V
V
GE = +15V
R
G =10Ω
V
CE = 400V
T
J = 25°C, or 125°C
R
G = 10Ω
L = 100μH
V
GE = 15V
V
CE = 400V
V
GE = +15V
R
G = 10Ω
V
CE = 400V
V
GE = +15V
R
G = 10Ω
R
G = 10Ω, L = 100
μ
H, V
CE = 400V
T
J = 125°C
T
J = 25°C
T
J = 125°C
T
J = 25°C
R
G = 10Ω, L = 100
μ
H, V
CE = 400V
T
J = 25 or 125°C,VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
E
on2,40A
E
on2,20A
E
off,20A
E
on2,10A
E
off,10A
V
CE = 400V
V
GE = +15V
T
J = 125°C
E
on2,40A
E
on2,20A
E
off,40A
E
off,20A
E
on2,10A
E
off,10A
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
E
off,40A


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