Thermal and Mechanical Characteristics

Dynamic Characteristics

APT44GA60B_SD30

Symbol

Characteristic

Min

Typ

Max

Unit

R

θJC

Junction to Case Thermal Resistance (IGBT)

-

-

.37

°C/W

R

θJC

Junction to Case Thermal Resistance (Diode)

0.8

W

T

Package Weight

-

5.9

-

g

Torque

Mounting Torque (TO-247 Package), 4-40 or M3 screw

10

in·lbf

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

C

ies

Input Capacitance

Capacitance

V

f = 1MHz

3404

pF

C

oes

Output Capacitance

358

C

res

Reverse Transfer Capacitance

43

Q

g

Gate Charge

V

V

I

128

nC

Q

ge

Gate-Emitter Charge

22

Q

gc

Gate- Collector Charge

44

SSOA

Switching Safe Operating Area

T

4

, V

L= 100uH, V

130

A

t

d(on)

Turn-On Delay Time

Inductive Switching (25°C)

V

V

I

R

4

T

16

ns

t

r

Current Rise Time

14

t

d(off)

Turn-Off Delay Time

84

t

f

Current Fall Time

29

E

on2

Turn-On Switching Energy

409

μJ

E

off

258

t

d(on)

Turn-On Delay Time

Inductive Switching (125°C)

V

V

I

R

4

T

14

ns

t

r

Current Rise Time

15

t

d(off)

Turn-Off Delay Time

109

t

f

Current Fall Time

99

E

on2

Turn-On Switching Energy

621

μJ

E

off

474

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.

3 See Mil-Std-750 Method 3471.

4 R

5 E

clamping diode.

6 E

Microsemi reserves the right to change, without notice, the specifications and information contained herein.