APT50GN60B_S(G)

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, I

ces

includes both IGBT and FRED leakages

3 See MIL-STD-750 Method 3471.

4 E

on1

is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current

adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.

5 E

on2

is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching

loss. (See Figures 21, 22.)

6 E

off

is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

7 R

G

is external gate resistance, not including R

G(int)

nor gate driver impedance. (MIC4452)

8 Continuous current limited by package lead temperature.

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

THERMAL AND MECHANICAL CHARACTERISTICS

UNIT

°C/W

gm

MIN

TYP

MAX

.41

N/A

5.9

Characteristic

Junction to Case (IGBT)

Junction to Case (DIODE)

Package Weight

Symbol

W

T

DYNAMIC CHARACTERISTICS

Symbol

C

ies

C

oes

C

res

V

GEP

Q

g

Q

ge

Q

gc

SSOA

SCSOA

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

Test Conditions

Capacitance

V

GE

= 0V, V

CE

= 25V

f = 1 MHz

Gate Charge

V

GE

= 15V

V

CE

= 300V

I

C

= 50A

T

J

= 175°C, R

G

= 4.3

GE

=

15V, L = 100µH,V

CE

= 600V

V

T

J

= 150°C, R

G

= 4.3

Inductive Switching (25°C)

V

CC

= 400V

V

GE

= 15V

I

C

= 50A

R

G

= 4.3

T

J

= +25°C

Inductive Switching (125°C)

V

CC

= 400V

V

GE

= 15V

I

C

= 50A

R

G

= 4.3

T

J

= +125°C

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-to-Emitter Plateau Voltage

Total Gate Charge

3

Gate-Emitter Charge

Gate-Collector ("Miller ") Charge

Switching Safe Operating Area

Short Circuit Safe Operating Area

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy

4

Turn-on Switching Energy (Diode)

5

Turn-off Switching Energy

6

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy

Turn-on Switching Energy (Diode)

Turn-off Switching Energy

MIN

TYP

MAX

3200

125

100

9.0

325

25

175

150

6

20

25

230

100

1185

1275

1565

20

25

260

140

1205

1850

2125

UNIT

pF

V

nC

A

ns

ns