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APT50GS60BRDLG Datasheet(PDF) 6 Page - Microsemi Corporation

Part # APT50GS60BRDLG
Description  Resonant Mode Combi IGBT
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT50GS60BRDLG Datasheet(HTML) 6 Page - Microsemi Corporation

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IC
A
D.U.T.
VCE
VCC
Figure 24, Turn-off Switching Waveforms and Definitions
Figure 23, Turn-on Switching Waveforms and Definitions
Figure 22, Inductive Switching Test Circuit
T
J = 125°C
Collector Current
Collector Voltage
Gate Voltage
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J = 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
APT50DL60
FOOT NOTE:
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
3 Short circuit time: V
GE = 15V, VCC ≤ 600V, TJ ≤ 150°C
4 Pulse test: Pulse width < 380μs, duty cycle < 2%
5 C
o(cr) is defined as a fixed capacitance with the same stored charge as Coes with VCE = 67% of V(BR)CES.
6 C
o(er) is defined as a fixed capacitance with the same stored energy as Coes with VCE = 67% of V(BR)CES. To calculate Co(er) for any value of
V
CE less than V(BR)CES, use this equation: Co(er) = 5.57E-8/VDS^2 + 7.15E-8/VDS + 2.75E-10.
7 R
G is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452).
8 E
on1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the
IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode.
9 E
on2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy.
10 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT50GS60BRDL(G)


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