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APT50GS60BRDLG Datasheet(PDF) 6 Page - Microsemi Corporation |
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APT50GS60BRDLG Datasheet(HTML) 6 Page - Microsemi Corporation |
6 / 9 page IC A D.U.T. VCE VCC Figure 24, Turn-off Switching Waveforms and Definitions Figure 23, Turn-on Switching Waveforms and Definitions Figure 22, Inductive Switching Test Circuit T J = 125°C Collector Current Collector Voltage Gate Voltage Switching Energy 5% 10% t d(on) 90% 10% t r 5% T J = 125°C Collector Voltage Collector Current Gate Voltage Switching Energy 0 90% t d(off) 10% t f 90% APT50DL60 FOOT NOTE: 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 3 Short circuit time: V GE = 15V, VCC ≤ 600V, TJ ≤ 150°C 4 Pulse test: Pulse width < 380μs, duty cycle < 2% 5 C o(cr) is defined as a fixed capacitance with the same stored charge as Coes with VCE = 67% of V(BR)CES. 6 C o(er) is defined as a fixed capacitance with the same stored energy as Coes with VCE = 67% of V(BR)CES. To calculate Co(er) for any value of V CE less than V(BR)CES, use this equation: Co(er) = 5.57E-8/VDS^2 + 7.15E-8/VDS + 2.75E-10. 7 R G is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452). 8 E on1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode. 9 E on2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy. 10 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT50GS60BRDL(G) |
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