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APT50GS60BRDQ2 Datasheet(PDF) 4 Page - Microsemi Corporation

Part # APT50GS60BRDQ2
Description  Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT50GS60BRDQ2 Datasheet(HTML) 4 Page - Microsemi Corporation

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I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
0
20
40
60
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120
0
20
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120
0
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80
100
120
0
20
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0
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120
0
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0
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125
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8
6
4
2
0
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0
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0
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8
6
4
2
0
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0
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0
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0
6
5
4
3
2
1
0
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 4.7Ω
L = 100µH
VCE = 400V
VGE = +15V
RG = 4.7Ω
R
G = 4.7Ω, L = 100µH, VCE = 400V
V
CE = 400V
T
J = 25°C, TJ =125°C
R
G = 4.7Ω
L = 100µH
V
GE = 15V
T
J = 125°C, VGE = 15V
T
J = 25 or 125°C,VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 125°C,VGE =15V
T
J = 25°C,VGE =15V
VCE = 400V
VGE = +15V
RG = 4.7Ω
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
VCE = 400V
VGE = +15V
RG = 4.7Ω
E
on2,100A
E
off,100A
E
off,50A
E
on2,50A
E
on2,25A
E
off,25A
E
on2,100A
E
off,100A
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
VCE = 400V
VGE = +15V
TJ = 125°C
R
G = 4.7Ω, L = 100µH, VCE = 400V
TYPICAL PERFORMANCE CURVES
APT50GS60B_SRDQ2(G)


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