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APT64GA90B Datasheet(PDF) 4 Page - Microsemi Corporation

Part # APT64GA90B
Description  High Speed PT IGBT
Download  6 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT64GA90B Datasheet(HTML) 4 Page - Microsemi Corporation

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V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 600V
R
G = 4.7Ω
L = 100μH
V
CE = 600V
V
GE = +15V
R
G =4.7Ω
V
CE = 600V
T
J = 25°C, or 125°C
R
G = 4.7Ω
L = 100μH
V
CE = 600V
V
GE = +15V
R
G = 4.7Ω
V
CE = 600V
V
GE = +15V
R
G = 4.7Ω
R
G = 4.7Ω, L = 100
μ
H, V
CE = 600V
T
J = 125°C
T
J = 25°C
T
J = 125°C
T
J = 25°C
R
G = 4.7Ω, L = 100
μ
H, V
CE = 600V
T
J = 25 or 125°C,VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
E
on2,76A
E
on2,38A
E
off,38A
E
on2,19A
E
off,19A
V
CE = 600V
V
GE = +15V
T
J = 125°C
E
on2,76A
E
on2,38A
E
off,76A
E
off,38A
E
on2,19A
E
off,19A
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
E
off,76A
Typical Performance Curves
APT64GA90B_S


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