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PF1015UDF8B Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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PF1015UDF8B Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
1 / 2 page 2009. 5. 26 1/2 SEMICONDUCTOR TECHNICAL DATA PF1015UDF8B ESD/EMI Filter Revision No : 2 1,8 : Filter channel 1 2,7 : Filter channel 2 3,6 : Filter channel 3 4,5 : Filter channel 4 UDFN-8B MILLIMETERS C H G K L J A D E F A B DIM 0.40 0.127 0.02+0.03/-0.02 0.20 Min 0.50 0.05 + _ 1.20 0.10 + _ 0.40 0.10 + _ 0.20 0.05 + _ 1.70 0.10 + _ 1.35 0.10 + _ 0.25 0.10 + _ TOP VIEW SIDE VIEW BOTTOM VIEW Pin 1 C D E GND PAD 1 4 8 5 L K EQUIVALENT CIRCUIT CHARACTERISTIC SYMBOL RATING UNIT DC Power Per Resistor PR 100 mW Power Dissipation *PD 400 Junction Temperature Tj 150 Storage Temperature Tstg -55~150 * Total Package Power Dissipation Type Name Lot No. T3 MARKING ELECTRICAL CHARACTERISTICS (Ta=25℃) 15pF 15pF 100Ω FILTERn* FILTERn* GND APPLICATION ・I/O ESD protection for mobile handsets, notebook, PDAs, etc. ・EMI filtering for data ports in cell phones, PDAs, notebook computers ・EMI filtering for LCD, camera and chip-to-chip data lines FEATURES ・EMI/RFI filtering ・ESD Protection to IEC 61000-4-2 Level 4 ・Low insertion loss ・Good attenuation of high frequency signals ・Low clamping voltage ・Low operating and leakage current ・Four elements in one package DESCRIPTION PF1015UDF8B is an EMI filter array with electrostatic discharge (ESD) protection, which integrates four pi filters (C-R-C). These parts include ESD protection diodes on every pin, providing a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge. The PF1015UDF8B provides the recommended line termination while implementing a low pass filter to limit EMI levels and providing ESD protection which exceeds IEC 61000-4-2 level 4 standard. The UDFN package is a very effective PCB space occupation and a very thin package (0.4mm Pitch, 0.5mm height) MAXIMUM RATING (Ta=25℃) RECOMMENEDED FOOTPRINT (dimensions in mm) 0.70 0.40 0.30 0.25 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Stand-Off Voltage VRWM - - - 5 V Reverse Breakdown Voltage VBR It=1mA 6 - - V Reverse Leakage Current IR VRWM=3.3V - - 1.0 μA Cutoff Frequency fc-3dB VLine=0V, ZSOURCE=50Ω, ZLOAD=50Ω - 110 - MHz Channel Resistance RLINE Between Input and Output 80 100 120 Ω Line Capacitance CLINE VLine=0V DC, 1MHz, Between I/O Pins and GND 36 45 54 pF VLine=2.5V, 1MHz, Between I/O Pins and GND 24 30 36 |
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