dBc

3.6V, 1W RF Power Transistors

for 900MHz Applications

2

_______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

DC ELECTRICAL CHARACTERISTICS

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

BIAS Diode Reverse Breakdown Voltage (MAX2602) ..........2.3V

SOIC (derate 80mW/°C above +70°C) (Note 1) .............6.4W

Operating Temperature Range ...........................-40°C to +85°C

Storage Temperature Range .............................-65°C to +165°C

Junction Temperature ......................................................+150°C

Lead Temperature (soldering, 10s) .................................+300°C

V

5.0

Collector-Emitter Sustaining

Voltage

V

15

15

Collector-Emitter Breakdown

Voltage

100

DC Current Gain

µA

0.05

1.5

Collector Cutoff Current

pF

9.6

Output Capacitance

UNITS

MIN

TYP

MAX

SYMBOL

PARAMETER

Note 1: Backside slug must be properly soldered to ground plane (see

Slug Layout Techniques section).

Shorted base

Open base

CONDITIONS

dB

3.3

NF

Noise Figure

dBc

-25

IM5

Two-Tone IMR

-16

IM3

8:1

Stability under Continuous

Load Mismatch Conditions

%

58

η

Collector Efficiency

dB

11.6

Power Gain

-42

2fo, 3fo

Harmonics

-43

mA

4.2

Base Current

GHz

DC

1

f

Frequency Range

UNITS

MIN

TYP

MAX

SYMBOL

PARAMETER

f2 = 836MHz

(Note 2)

No modulation

CONDITIONS

AC ELECTRICAL CHARACTERISTICS

erwise noted.)

Note 2: Guaranteed by design.

Note 3: Under these conditions: a) no spurious oscillations shall be observed at collector greater than -60dBc; b) no parametric

degradation is observable when mismatch is removed; and c) no current draw in excess of the package dissipation

capability is observed.

V

15

Collector-Base Breakdown

Voltage

dBc