Preliminary Data Sheet

September 2003

AGR18090E

90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor

Introduction

The AGR18090E is a high-voltage, gold-metalized,

laterally diffused metal oxide semiconductor

(LDMOS) RF power transistor suitable for global sys-

tem for mobile communication (GSM), enhanced

data for global evolution (EDGE), and multicarrier

class AB power amplifier applications. This device is

manufactured using advanced LDMOS technology

offering state-of-the-art performance and reliability. It

is packaged in an industry-standard package and is

capable of delivering a typical output power of 90 W,

which makes it ideally suited for today’s wireless

base station RF power amplifier applications.

Figure 1. Available Packages

Features

Typical performance ratings for GSM EDGE

— Modulation spectrum:

@ ±400 kHz = –63 dBc.

@ ±600 kHz = –73 dBc.

— Error vector magnitude (EVM) = 1.7%.

— Gain = 15 dB.

— Drain Efficiency = 31%.

Typical continuous wave (CW) performance over

entire digital communication system (DCS) band:

— Return loss: –10 dB.

High-reliability gold-metalization process.

Low hot carrier injection (HCI) induced bias drift

over 20 years.

Internally matched.

High gain, efficiency, and linearity.

Integrated ESD protection.

90 W minimum output power.

Device can withstand 10:1 voltage standing wave

ratio (VSWR) at 26 Vdc, 1.840 GHz, 90 W CW out-

put power.

Large signal impedance parameters available.

Table 1. Thermal Characteristics

Table 2. Absolute Maximum Ratings

*

* Stresses in excess of the absolute maximum ratings can cause

permanent damage to the device. These are absolute stress rat-

ings only. Functional operation of the device is not implied at

these or any other conditions in excess of those given in the

operational sections of the data sheet. Exposure to absolute

maximum ratings for extended periods can adversely affect

device reliability.

Table 3. ESD Rating

*

* Although electrostatic discharge (ESD) protection circuitry has

been designed into this device, proper precautions must be

taken to avoid exposure to ESD and electrical overstress (EOS)

during all handling, assembly, and test operations. Agere

employs both a human-body model (HBM) and a charged-device

model (CDM) qualification requirement in order to determine

ESD-susceptibility limits and protection design evaluation. ESD

voltage thresholds are dependent on the circuit parameters used

in each of the models, as defined by JEDEC's JESD22-A114

(HBM) and JESD22-C101 (CDM) standards.

Caution: MOS devices are susceptible to damage from elec-

trostatic charge. Reasonable precautions in han-

dling and packaging MOS devices should be

observed.

AGR18090EU

AGR18090EF

Parameter

Sym

Value

Unit

Thermal Resistance,

Junction to Case:

AGR18090EU

AGR18090EF

0.75

0.75

°C/W

°C/W

Parameter

Sym

Value

Unit

Drain-source Voltage

65

Vdc

Gate-source Voltage

Drain Current—Continuous

8.5

Adc

AGR18090EU

AGR18090EF

230

230

W

W

Derate Above 25 ˇC:

AGR18090EU

AGR18090EF

—

—

1.31

1.31

W/°C

W/°C

Operating Junction Tempera-

ture

200

°C

AGR18090E

Minimum (V)

Class

HBM

500

1B

MM

50

A

CDM

1500

4

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