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PI2001 Datasheet(PDF) 18 Page - Vicor Corporation |
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PI2001 Datasheet(HTML) 18 Page - Vicor Corporation |
18 / 23 page 4. SP and SN pins: Since the PI2001 controller GND pin is connected to the input (Vin) which is also the MOSFET source, connect the SP pin directly to the PI2001 GND pin to reduce the parasitic between the SP pin and the GND pin to avoid negative voltages on the SP pin with respect to GND pin. Connect the SN pin to the MOSFET drain pin. 5. BK pin: Connect the BK pin to the GND pin to achieve the minimum reverse current response time. 6. SL pin: Not required, so leave floating. 7. FT pin: The FT pin output is referenced to the PI2001 GND pin which is connected to Vin. A level shift circuit can be added to make the FT pin output referenced to the system ground. The recommended level shift circuit is shown in Figure 16, The level shift circuit uses a Dual Bias Resistor Transistor circuit which is available as a small device that contains two transistors and their bias resistors, part number NSBC114EPDXV6T1. 8. UV and OV inputs: In floating applications these pins can not be used to monitor Vin. Connect UV to the VC pin and OV to the GND pin to disable their function. Typical application Example 3: Requirement: Redundant Bus Voltage = -48V (-36V to -60V, 100V for 100ms transient) Load Current = 5A load (assume through each redundant path) Maximum Ambient Temperature = 60°C Solution: 1. A single PI2001 with a suitable MOSFET for each redundant -48V power source should be used and configured as shown in figure 17. The VC is biased from the return line through a bias resistor. 2. Select a suitable N-Channel MOSFET: Select the N-Channel MOSFET with voltage rating higher than the input voltage, Vin, plus any expected transient voltages, with a low Rds(on) that is capable of supporting the full load current with margin. For instance, a 100V rated MOSFET with 10A current capability is suitable. An exemplary MOSFET having these characteristic is Si4486EY from Vishay Siliconix. From Si4486EY datasheet: • N-Channel MOSFET • VDS= 100V • ID = 23A continuous drain current at 125°C • VGS(MAX) = ± 20V • RθJA= 50°C/W • RDS(on)=20mΩ typical at VGS=10V, TJ=25°C Reverse current threshold is: mA m mV on Rds reverse Vth reverse Is 300 20 6 ) ( . . − = Ω − = = Power dissipation: Rds(on) is 25mΩ maximum at 25°C & 10Vgs and will increase as the temperature increases. Add 40°C to maximum ambient temperature to compensate for the temperature rise due to power dissipation. At 100°C (60°C + 40°C) Rds(on) will increase by 63%. Ω = ∗ Ω = m m on Rds 41 63 . 1 25 ) ( maximum at 100°C Maximum Junction temperature C m A W C C T J ° = ⎟ ⎠ ⎞ ⎜ ⎝ ⎛ Ω ∗ ∗ ° + ° = 111 41 ) 0 . 5 ( 50 60 2 max Recalculate based on calculated Junction temperature, 115°C. At 115°C Rds(on) will increase by 72%. Ω = ∗ Ω = m m on Rds 43 72 . 1 25 ) ( maximum at 115°C C m A W C C T J ° = ⎟ ⎠ ⎞ ⎜ ⎝ ⎛ Ω ∗ ∗ ° + ° = 113 43 ) 0 . 5 ( 50 60 2 max Picor Corporation • picorpower.com PI2001 Rev 1.0 Page 18 of 23 |
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