BUL147 BUL147F

3–5

Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

hFE, FORCED GAIN

3

180

hFE, FORCED GAIN

Figure 13. Inductive Fall Time

Figure 14. Inductive Crossover Time

Figure 15. Forward Bias Safe Operating Area

Figure 16. Reverse Bias Switching Safe Operating Area

Figure 17. Forward Bias Power Derating

60

5

15

300

150

50

100

10

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

9

6

0

0

200

1.0

0.8

0.2

0.0

20

TC, CASE TEMPERATURE (°C)

80

140

160

1

0.01

3

600

800

4

100

1000

DC (BUL147)

5 ms

VBE(off) = 0 V

TC ≤ 125°C

IC/IB ≥ 4

LC = 500 µH

0.6

0.4

6

7

8

9

10

11

12

13

14

80

100

160

3

5

15

4

6

7

8

9

10

11

12

13

14

200

100

IC = 2 A

IC = 4.5 A

TJ = 25°C

TJ = 125°C

10

0.1

EXTENDED

SOA

1 ms

10

µs

1

µs

400

2

1

4

5

–1, 5 V

40

60

100

120

SECOND BREAKDOWN

DERATING

THERMAL DERATING

DC (BUL147F)

120

140

250

100

300

500

700

7

8

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipation

than the curves indicate. The data of Figure 15 is based on TC

= 25

°C; TJ(pk) is variable depending on power level. Second

breakdown pulse limits are valid for duty cycles to 10% but

must be derated when TC > 25°C. Second breakdown limita-

tions do not derate the same as thermal limitations. Allowable

current at the voltages shown in Figure 15 may be found at

any case temperature by using the appropriate curve on Fig-

ure 17. TJ(pk) may be calculated from the data in Figure 20

and 21. At any case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by second breakdown. For inductive

loads, high voltage and current must be sustained simulta-

neously during turn–off with the base–to–emitter junction re-

verse–biased. The safe level is specified as a reverse–biased

safe operating area (Figure 16). This rating is verified under

clamped conditions so that the device is never subjected to

an avalanche mode.

TJ = 25°C

TJ = 125°C

IC = 2 A

IC = 4.5 A

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200 µH

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200 µH

– 5 V

GUARANTEED SAFE OPERATING AREA INFORMATION

TYPICAL SWITCHING CHARACTERISTICS

(IB2 = IC/2 for all switching)