© 2004

OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — contact@osa-opto.com

INFRA-RED

Item No.: 132141 L

1.

This specification applies to GaAlAs / GaAlAs LED Chips (substrate removed)

2.

Structure

2.1

Mesa structure

2.2

Electrodes

p-side (anode)

Au alloy

n-side (cathode)

Au alloy

3.

Outlines (dimensions in microns)

Wire bond contacts can also be square

4.

Electrical and optical characteristics (T=25°C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Forward voltage

1,70

2,10

V

Reverse voltage

5

V

output Power *

Φ

e

2,4

3,3

mW

Switching time

35

ns

Peak wavelength

λ

P

790

nm

Power measurement at OSA on gold plate

5.

Packing

Dice on adhesive film with 1) wire bond side on top

2) back contact on top

6.

Labeling

Type

Lot No.

Φ

Quantity

min

max

n-Epitaxy GaAlAs

n-Electrode

p-Electrode

p-Epitaxy GaAlAs

Active Layer

150

typ.

325

120

325