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AS8S512K32PEC Datasheet(PDF) 1 Page - Austin Semiconductor |
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AS8S512K32PEC Datasheet(HTML) 1 Page - Austin Semiconductor |
1 / 7 page iiiiiPEM PEM PEM PEM PEM 16 MB ASYNC SRAM 16 MB ASYNC SRAM 16 MB ASYNC SRAM 16 MB ASYNC SRAM 16 MB ASYNC SRAM AS8S512K32PEC AS8S512K32PEC Rev. 0.1 01/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 Austin Semiconductor, Inc. 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES Integrated Real-Time Memory Array Solution No latency or refresh fycles Parallel Read/Write Interface User Configurable via multiple enables Random Access Memory Array Fast Access Times: 12, 15, 20, and 25ns TTL Compatible I/O Fully Static, No Clocks Surface Mount Package 68 Lead PLCC, No. 99 JEDEC M0-47AE Small Footprint, 0.990 Sq. In. Multiple Ground Pins for Maximum Noise Immunity Single +5V (±5%) Supply Operation DESCRIPTION The AS8S512K32 is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 20 and 25ns creating a zero wait state/latency, real-time memory solution. The high speed, 5v supply voltage and control lines,make the device ideal for all your real-time computer memory requirements. The device can be configured as a 512K x 32 and used to create a single chip external data /program memory array solution or via use of the individual chip enable lines, be reconfigured as a 1M x 16 or 2M x 8. The device provides a 50+% space savings when compared to four 512K x 8, 36 pin SOJs. In addition the AS8S512K32 has only a 20pF load on the Addr. lines vs. ~30pF for four plastic SOJs. PIN CONFIGURATIONS AND BLOCK DIAGRAM 10 11 12 13 14 15 16 17 18 19 20 21 22 DQ17 DQ18 60 DQ14 59 DQ13 DQ19 58 DQ12 Vss 57 Vss DQ20 56 DQ11 DQ21 55 DQ10 DQ22 54 DQ09 DQ23 53 DQ08 Vcc 52 Vcc DQ24 51 DQ07 DQ25 50 DQ06 DQ26 49 DQ05 DQ27 48 DQ04 Vss 47 Vss DQ28 46 DQ03 DQ29 45 DQ02 DQ30 44 DQ01 23 24 25 26 BYTE CONTROL TABLE Chip Byte Enable Control E0\ DQ0-7 E1\ DQ8-15 E2\ DQ16-23 E3\ DQ24-31 PIN NAMES A0 - A18 Address Inputs E0\ - E3\ Chip Enables W\ Write Enables G\ Output Enable DQ0 - DQ31 Common Data Input/Output Vcc Power (+5V ± 10%) Vss Ground NC No Connection A0-A18 G\ W\ E0\ E1\ DQ0-DQ7 E2\ DQ8-DQ15 E3\ DQ16-DQ23 DQ24-DQ31 512K x 32 Memory Array 19 |
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