iiiiiPEM

PEM

PEM

PEM

PEM

16 MB ASYNC SRAM

16 MB ASYNC SRAM

16 MB ASYNC SRAM

16 MB ASYNC SRAM

16 MB ASYNC SRAM

AS8S512K32PEC

AS8S512K32PEC

Rev. 0.1 01/09

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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Austin Semiconductor, Inc.

16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM

Integrated Plastic Encapsulated Microcircuit

FEATURES

Integrated Real-Time Memory Array Solution

No latency or refresh fycles

Parallel Read/Write Interface

User Configurable via multiple enables

Random Access Memory Array

Fast Access Times: 12, 15, 20, and 25ns

TTL Compatible I/O

Fully Static, No Clocks

Surface Mount Package

68 Lead PLCC, No. 99 JEDEC M0-47AE

Small Footprint, 0.990 Sq. In.

Multiple Ground Pins for Maximum Noise Immunity

Single +5V (±5%) Supply Operation

DESCRIPTION

The AS8S512K32 is a high speed, 5V, 16Mb SRAM. The

device is available with access times of 12, 15, 20 and

25ns creating a zero wait state/latency, real-time memory

solution. The high speed, 5v supply voltage and control

lines,make the device ideal for all your real-time computer

memory requirements.

The device can be configured as a 512K x 32 and used to

create a single chip external data /program memory array

solution or via use of the individual chip enable lines, be

reconfigured as a 1M x 16 or 2M x 8.

The device provides a 50+% space savings when

compared to four 512K x 8, 36 pin SOJs. In addition the

AS8S512K32 has only a 20pF load on the Addr. lines vs.

~30pF for four plastic SOJs.

PIN CONFIGURATIONS AND BLOCK DIAGRAM

10

11

12

13

14

15

16

17

18

19

20

21

22

DQ17

DQ18

60

DQ14

59

DQ13

DQ19

58

DQ12

Vss

57

Vss

DQ20

56

DQ11

DQ21

55

DQ10

DQ22

54

DQ09

DQ23

53

DQ08

Vcc

52

Vcc

DQ24

51

DQ07

DQ25

50

DQ06

DQ26

49

DQ05

DQ27

48

DQ04

Vss

47

Vss

DQ28

46

DQ03

DQ29

45

DQ02

DQ30

44

DQ01

23

24

25

26

BYTE CONTROL TABLE

Chip

Byte

Enable

Control

E0\

DQ0-7

E1\

DQ8-15

E2\

DQ16-23

E3\

DQ24-31

PIN NAMES

A0 - A18

Address Inputs

E0\ - E3\

Chip Enables

W\

Write Enables

G\

Output Enable

DQ0 - DQ31 Common Data Input/Output

Vcc

Power (+5V ± 10%)

Vss

Ground

NC

No Connection

A0-A18

G\

W\

E0\

E1\

DQ0-DQ7

E2\

DQ8-DQ15

E3\

DQ16-DQ23

DQ24-DQ31

512K x 32

Memory Array

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