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FDP030N06 Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part # FDP030N06
Description  N-Channel PowerTrench짰 MOSFET 60V, 193A, 3.2m?
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDP030N06 Datasheet(HTML) 2 Page - Fairchild Semiconductor

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FDP030N06 Rev. A
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics T
C = 25
oC unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP030N06
FDP030N06
TO-220
-
-
50
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V, TC = 25
oC
60
-
-
V
∆BV
DSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 1mA, Referenced to 25
oC
-
0.05
-
V/oC
IDSS
Zero Gate Voltage Drain Current
VDS = 48V, VGS = 0V
-
-
1
µA
VDS = 48V, TC = 150
oC
-
-
500
IGSS
Gate to Body Leakage Current
VGS = ±20V, VDS = 0V
-
-
±100
nA
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250µA
2.5
3.5
4.5
V
RDS(on)
Static Drain to Source On Resistance
VGS = 10V, ID = 75A
-
2.6
3.2
m
gFS
Forward Transconductance
VDS = 10V, ID = 75A
(Note 4)
-
154
-
S
Ciss
Input Capacitance
VDS = 25V, VGS = 0V
f = 1MHz
-
7380
9815
pF
Coss
Output Capacitance
-
1095
1455
pF
Crss
Reverse Transfer Capacitance
-
415
625
pF
Qg(tot)
Total Gate Charge at 10V
VDS = 48V, ID = 75A
VGS = 10V
(Note 4, 5)
-
116
151
nC
Qgs
Gate to Source Gate Charge
-
40
-
nC
Qgd
Gate to Drain “Miller” Charge
-
35
-
nC
td(on)
Turn-On Delay Time
VDD = 30V, ID = 75A
VGS = 10V, RGEN = 4.7Ω
(Note 4, 5)
-
39
87
ns
tr
Turn-On Rise Time
-
178
366
ns
td(off)
Turn-Off Delay Time
-
54
118
ns
tf
Turn-Off Fall Time
-
33
76
ns
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
193
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
772
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
-
-
1.3
V
trr
Reverse Recovery Time
VGS = 0V, ISD = 75A
dIF/dt = 100A/µs
(Note 4)
-
46
-
ns
Qrr
Reverse Recovery Charge
-
50
-
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.51mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 75A, di/dt ≤ 450A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width
≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics


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