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FDP030N06 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDP030N06 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDP030N06 Rev. A www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDP030N06 FDP030N06 TO-220 - - 50 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC = 25 oC 60 - - V ∆BV DSS ∆T J Breakdown Voltage Temperature Coefficient ID = 1mA, Referenced to 25 oC - 0.05 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 48V, VGS = 0V - - 1 µA VDS = 48V, TC = 150 oC - - 500 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250µA 2.5 3.5 4.5 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 75A - 2.6 3.2 m Ω gFS Forward Transconductance VDS = 10V, ID = 75A (Note 4) - 154 - S Ciss Input Capacitance VDS = 25V, VGS = 0V f = 1MHz - 7380 9815 pF Coss Output Capacitance - 1095 1455 pF Crss Reverse Transfer Capacitance - 415 625 pF Qg(tot) Total Gate Charge at 10V VDS = 48V, ID = 75A VGS = 10V (Note 4, 5) - 116 151 nC Qgs Gate to Source Gate Charge - 40 - nC Qgd Gate to Drain “Miller” Charge - 35 - nC td(on) Turn-On Delay Time VDD = 30V, ID = 75A VGS = 10V, RGEN = 4.7Ω (Note 4, 5) - 39 87 ns tr Turn-On Rise Time - 178 366 ns td(off) Turn-Off Delay Time - 54 118 ns tf Turn-Off Fall Time - 33 76 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 193 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 772 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A - - 1.3 V trr Reverse Recovery Time VGS = 0V, ISD = 75A dIF/dt = 100A/µs (Note 4) - 46 - ns Qrr Reverse Recovery Charge - 50 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.51mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 75A, di/dt ≤ 450A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics |
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Similar Description - FDP030N06 |
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