tm

April 2009

©2009 Fairchild Semiconductor Corporation

FDP10N60ZU/FDPF10N60ZUT Rev. A

www.fairchildsemi.com

1

UniFET

TM

FDP10N60ZU / FDPF10N60ZUT

N-Channel MOSFET, FRFET

600V, 9A, 0.8

Ω

Features

• Low gate charge ( Typ. 31nC)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advance technology has been especially tailored to

minimize

on-state

resistance,

provide

superior

switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switching mode power supplies and active power factor

correction.

TO-220F

FDPF Series

G

S

D

TO-220

FDP Series

G D S

G

S

D

G

S

D

Thermal Characteristics

Symbol

Parameter

FDP10N60ZU

FDPF10N60ZUT

Units

Drain to Source Voltage

600

V

Gate to Source Voltage

±30

V

Drain Current

9

9*

A

5.4

5.4*

Drain Current

- Pulsed

(Note 1)

36

36*

A

Single Pulsed Avalanche Energy

(Note 2)

100

mJ

Avalanche Current

(Note 1)

9

A

Repetitive Avalanche Energy

(Note 1)

18

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

20

V/ns

Power Dissipation

180

42

W

1.45

0.3

Operating and Storage Temperature Range

-55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

Symbol

Parameter

FDP10N60ZU FDPF10N60ZUT

Units

Thermal Resistance, Junction to Case

0.7

3.0

Thermal Resistance, Junction to Ambient

0.5

-

Thermal Resistance, Junction to Ambient

62.5

62.5

*Drain current limited by maximum junction temperature