FDPF680N10T Rev. A

www.fairchildsemi.com

2

Package Marking and Ordering Information

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDPF680N10T

FDPF680N10T

TO-220F

-

-

50

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain to Source Breakdown Voltage

100

-

-

V

Breakdown Voltage Temperature

Coefficient

0.1

-

Zero Gate Voltage Drain Current

-

-

1

μA

-

-

500

Gate to Body Leakage Current

-

-

±100

nA

Gate Threshold Voltage

3.5

4.5

V

Static Drain to Source On Resistance

-

54

68

m

Ω

Forward Transconductance

(Note 4)

-26

-

S

Input Capacitance

f = 1MHz

-

750

1000

pF

Output Capacitance

-

60

80

pF

Reverse Transfer Capacitance

-

25

40

pF

Total Gate Charge

(Note 4, 5)

-13

17

nC

Gate to Source Gate Charge

-

4

-

nC

Gate to Drain “Miller” Charge

-

4

-

nC

Turn-On Delay Time

(Note 4, 5)

-13

36

ns

Turn-On Rise Time

-

19

48

ns

Turn-Off Delay Time

-

18

46

ns

Turn-Off Fall Time

-

6

22

ns

Maximum Continuous Drain to Source Diode Forward Current

-

-

12

A

Maximum Pulsed Drain to Source Diode Forward Current

-

-

48

A

Drain to Source Diode Forward Voltage

-

-

1.3

V

Reverse Recovery Time

(Note 4)

-29

-

ns

Reverse Recovery Charge

-

35

-

nC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

4. Pulse Test: Pulse width

≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics