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FDPF680N10T Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDPF680N10T Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDPF680N10T Rev. A www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDPF680N10T FDPF680N10T TO-220F - - 50 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC 100 - - V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25oC- 0.1 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 100V, VGS = 0V - - 1 μA VDS = 100V, VGS = 0V, TC = 150oC - - 500 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA2.5 3.5 4.5 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 6A - 54 68 m Ω gFS Forward Transconductance VDS = 10V, ID = 12A (Note 4) -26 - S Ciss Input Capacitance VDS = 50V, VGS = 0V f = 1MHz - 750 1000 pF Coss Output Capacitance - 60 80 pF Crss Reverse Transfer Capacitance - 25 40 pF Qg(tot) Total Gate Charge VDS = 80V, ID = 12A VGS = 10V (Note 4, 5) -13 17 nC Qgs Gate to Source Gate Charge - 4 - nC Qgd Gate to Drain “Miller” Charge - 4 - nC td(on) Turn-On Delay Time VDD = 50V, ID = 12A VGS = 10V, RGEN = 10Ω (Note 4, 5) -13 36 ns tr Turn-On Rise Time - 19 48 ns td(off) Turn-Off Delay Time - 18 46 ns tf Turn-Off Fall Time - 6 22 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 12 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 48 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 12A - - 1.3 V trr Reverse Recovery Time VGS = 0V, ISD = 12A dIF/dt = 100A/μs (Note 4) -29 - ns Qrr Reverse Recovery Charge - 35 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.7mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 12A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics |
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