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TC3938 Datasheet(PDF) 1 Page - Transcom, Inc. |
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TC3938 Datasheet(HTML) 1 Page - Transcom, Inc. |
1 / 3 page TC3938 REV2_20070503 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 1 / 3 Packaged Single-Bias Medium Power PHEMT GaAs FETs FEATURES ! 1.0 dB Typical Noise Figure at 12 GHz PHOTO ENLARGEMENT ! High Associated Gain: Ga = 8 dB Typical at 12 GHz ! 24dBm Typical Power at 12 GHz ! 9 dB Typical Linear Power Gain at 12 GHz ! Lg = 0.25 µm, Wg = 600 µm ! 100 % DC Tested ! Micro-X Metal Ceramic Package DESCRIPTION The TC3938 is a single-bias medium power ceramic micro-x packaged device with TC1304 PHEMT GaAs FETs, which is designed to provide the single power supply application. The device is suitable for oscillator, medium power amplifier in a wide range of commercial applications. All devices are 100% DC tested to assure consistent quality. ELECTRICAL SPECIFICATIONS (TA=25 °°°°C) Symbol Conditions MIN TYP MAX UNIT NF Noise Figure at VDS = 5 V, f = 12GHz 1.0 1.5 dB Ga Associated Gain at VDS = 5 V, f = 12GHz 7 8 dB P1dB Output Power at 1dB Gain Compression Point, f = 12GHz VDS = 5 V 23 24 dBm GL Linear Power Gain, f = 12GHz VDS = 5 V 7.5 9 dB IDS Drain-Source Current at VDS = 5 V 100 mA Rth Thermal Resistance 65 °C/W ABSOLUTE MAXIMUM RATINGS (TA=25 °°°°C) HANDLING PRECAUTIONS: Symbol Parameter Rating VDS Drain-Source Voltage 7.0 V Pin RF Input Power, CW 24 dBm PT Continuous Dissipation 600 mW TCH Channel Temperature 175 °C TSTG Storage Temperature -65 °C to +175°C The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. |
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