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CHR3694-QDG Datasheet(PDF) 4 Page - United Monolithic Semiconductors |
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CHR3694-QDG Datasheet(HTML) 4 Page - United Monolithic Semiconductors |
4 / 18 page CHR3694-QDG 37-40GHz Down Converter Ref. : DSCHA3694-QDG9077 - 18 Mar 09 4/18 Specifications subject to change without notice Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Device thermal performances All the figures given in this section are obtained assuming that the QFN device is cooled down only by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back-side interface (Tcase) as shown below. The system maximum temperature must be adjusted in order to guarantee that Tcase remains below than the maximum value specified in the next table. So, the system PCB must be designed to comply with this requirement. A derating must be applied on the dissipated power if the Tcase temperature can not be maintained below than the maximum temperature specified (see the curve Pdiss. Max) in order to guarantee the nominal device life time (MTTF). Max. junction temperature (Tj max) : 144 °C Max. continuous dissipated power @ Tcase= 85 °C : 0,6 W => Pdiss derating above Tcase (1)= 85 °C : 10 mW/°C Junction-Case thermal resistance (Rth J-C) (2) : <97 °C/W Min. package back side operating temperature (3) : -40 °C Max. package back side operating temperature (3) : 85 °C Min. storage temperature : -55 °C Max. storage temperature : 125 °C (1) Derating at junction temperature constant = Tj max. (2) Rth J-C is calculated for a worst case where the hotter junction of the MMIC is considered. (3) Tcase=Package back side temperature measured under the die-attach-pad (see the drawing below). DEVICE THERMAL SPECIFICATION : CHR3694-QDG 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 -50 -25 0 25 50 75 100 125 Tcase (°C) Pdiss. Max. (W) Tcase Example of QFN 16L 3x3 back-side view, temperature reference point (Tcase) location. |
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