M13S32321A datasheet(5/50 Pages) ESMT

Part #	M13S32321A

Description	256K x 32 Bit x 4 Banks Double Data Rate SDRAM

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Manufacturer	ESMT [Elite Semiconductor Memory Technology Inc.]

Direct Link	http://www.esmt.com.tw/index.asp

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5 / 50 page

ESMT

M13S32321A

Elite Semiconductor Memory Technology Inc.

Publication Date : Jul. 2008

Revision : 1.1

5/50

DC Specifications

Version

Parameter

Symbol

Test Condition

-5

-6

Unit Note

Operation Current

(One Bank Active)

IDD0

tRC = tRC (min) tCK = tCK (min)

Active – Precharge

120

100

mA

Operation Current

(One Bank Active)

IDD1

Burst Length = 2 tRC = tRC (min), CL= 3

IOUT = 0mA,

Active-Read- Precharge

175

150

mA

Precharge Power-down Standby

Current

IDD2P

CKE

≤ V

IL(max),

tCK = tCK (min), All

banks idle

20

mA

Idle Standby Current

IDD2N

CKE

≥ V

IH(min),

CS

≥ V

IH(min), tCK =

tCK (min)

70

60

mA

Active

Power-down

Standby

Current

IDD3P

All banks ACT, CKE

≤ V

IL(max), tCK =

tCK (min)

20

mA

Active Standby Current

IDD3N

One bank; Active-Precharge, tRC =

tRAS(max),

tCK = tCK (min)

90

80

mA

Operation Current (Read)

IDD4R

Burst Length = 2, CL= 3 , tCK = tCK

(min), IOUT = 0mA

260

220

mA

Operation Current (Write)

IDD4W

Burst Length = 2, CL= 3 , tCK = tCK

(min)

210

180

mA

Auto Refresh Current

IDD5

tRC ≥ tRFC(min)

190

160

mA

Self Refresh Current

IDD6

CKE

≤ 0.2V

3

mA

1

Note 1. Enable on-chip refresh and address counters.

AC Operation Conditions & Timing Specification

AC Operation Conditions

Parameter

Symbol

Min

Max

Unit

Note

Input High (Logic 1) Voltage, DQ, DQS and DM signals

VIH(AC)

VREF + 0.45

V

Input Low (Logic 0) Voltage, DQ, DQS and DM signals

VIL(AC)

VREF - 0.45

V

Input Different Voltage, CLK and CLK inputs

VID(AC)

0.7

VDDQ+0.6

V

1

Input Crossing Point Voltage, CLK and CLK inputs

VIX(AC)

0.5*VDDQ-0.2

0.5*VDDQ+0.2

V

2

Note1. VID is the magnitude of the difference between the input level on CLK and the input on CLK .

2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the

same.

Input / Output Capacitance

(VDD = 2.375V~2.625V, VDDQ =2.375V~2.625V, TA = 25 C

° , f = 1MHz)

Parameter

Symbol

Min

Max

Unit

Input capacitance

(A0~A9, BA0~BA1, CKE, CS , RAS , CAS , WE )

CIN1

2

3

pF

Input capacitance (CLK, CLK )

CIN2

2

3

pF

Data & DQS input/output capacitance

COUT

4.0

5

pF

Input capacitance (DM)

CIN3

4.0

5

pF

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