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M13S128168A-6TIG Datasheet(PDF) 5 Page - Elite Semiconductor Memory Technology Inc. |
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M13S128168A-6TIG Datasheet(HTML) 5 Page - Elite Semiconductor Memory Technology Inc. |
5 / 49 page ESMT M13S128168A Operation temperature condition -40 °C~85°C Elite Semiconductor Memory Technology Inc. Publication Date : Mar. 2009 Revision : 1.2 5/49 DC Specifications Version Parameter Symbol Test Condition -5 -6 Unit Note Operation Current (One Bank Active) IDD0 tRC = tRC (min) tCK = tCK (min) Active – Precharge 140 140 mA Operation Current (One Bank Active) IDD1 Burst Length = 2 tRC = tRC (min), CL= 3, IOUT = 0mA, Active-Read- Precharge 175 150 mA Precharge Power-down Standby Current IDD2P CKE ≤ VIL(max), tCK = tCK (min), All banks idle 40 40 mA Idle Standby Current IDD2N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = tCK (min) 100 95 mA Active Power-down Standby Current IDD3P All banks ACT, CKE ≤ VIL(max), tCK = tCK (min) 50 45 mA Active Standby Current IDD3N One bank; Active-Precharge, tRC = tRAS(max), tCK = tCK (min) 100 100 mA Operation Current (Read) IDD4R Burst Length = 2, CL= 3 , tCK = tCK (min), IOUT = 0mA 245 215 mA Operation Current (Write) IDD4W Burst Length = 2, CL= 3 , tCK = tCK (min) 240 200 mA Auto Refresh Current IDD5 tRC ≥ tRFC(min) 270 250 mA Self Refresh Current IDD6 CKE ≤ 0.2V 5 5 mA 1 Note 1. Enable on-chip refresh and address counters. AC Operation Conditions & Timing Specification AC Operation Conditions Parameter Symbol Min Max Unit Note Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.31 V Input Low (Logic 0) Voltage, DQ, DQS and DM signals VIL(AC) VREF - 0.31 V Input Different Voltage, CLK and CLK inputs VID(AC) 0.7 VDDQ+0.6 V 1 Input Crossing Point Voltage, CLK and CLK inputs VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 2 Note1. VID is the magnitude of the difference between the input level on CLK and the input on CLK . 2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same. Input / Output Capacitance (VDD = 2.375V~2.75V, VDDQ =2.375V~2.75V, TA = 25 C ° , f = 1MHz) Parameter Symbol Min Max Unit Input capacitance (A0~A11, BA0~BA1, CKE, CS , RAS , CAS , WE ) CIN1 2.5 3.5 pF Input capacitance (CLK, CLK ) CIN2 2.5 3.5 pF Data & DQS input/output capacitance COUT 4.0 5.5 pF Input capacitance (DM) CIN3 4.0 5.5 pF |
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