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M14D5121632A Datasheet(PDF) 4 Page - Elite Semiconductor Memory Technology Inc.

Part # M14D5121632A
Description  8M x 16 Bit x 4 Banks DDR II SDRAM
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Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

M14D5121632A Datasheet(HTML) 4 Page - Elite Semiconductor Memory Technology Inc.

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ESMT
M14D5121632A
Operation Temperature Condition (TC) -40
°C~95°C
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
4/59
Pin Description
Pin Name
Function
Pin Name
Function
A0~A12,
BA0,BA1
Address inputs
- Row address A0~A12
- Column address A0~A9
A10/AP : Auto Precharge
BA0, BA1 : Bank selects (4 Banks)
DM
(LDM, UDM)
DM is an input mask signal for write data.
LDM is DM for DQ0~DQ7 and UDM is DM
for DQ8~DQ15.
DQ0~DQ15
Data-in/Data-out
CLK, CLK
Differential clock input
RAS
Command input
CKE
Clock enable
CAS
Command input
CS
Chip select
WE
Command input
VDDQ
Supply Voltage for DQ
VSS
Ground
VSSQ
Ground for DQ
VDD
Power
VREF
Reference Voltage
DQS,
(LDQS,
UDQS,
)
Bi-directional differential Data Strobe.
LDQS and /LDQS are DQS for DQ0~DQ7;
UDQS and /UDQS are DQS for DQ8~DQ15.
VDDL
Supply Voltage for DLL
ODT
On-Die-Termination.
ODT is only applied to DQ0~DQ15, DM, DQS
and /DQS.
VSSDL
Ground for DLL
NC
No connection
Absolute Maximum Rating
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 ~ 2.3
V
Voltage on VDD supply relative to VSS
VDD
-1.0 ~ 2.3
V
Voltage on VDDL supply relative to VSS
VDDL
-0.5 ~ 2.3
V
Voltage on VDDQ supply relative to VSS
VDDQ
-0.5 ~ 2.3
V
Storage temperature
TSTG
-55 ~ +100
C
°
( Note *)
Power dissipation
PD
1
W
Short circuit output current
IOUT
50
mA
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
Note *: Storage Temperature is the case surface temperature on the center/top side of the DRAM.


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