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M14D5121632A-3BIG Datasheet(PDF) 8 Page - Elite Semiconductor Memory Technology Inc.

Part # M14D5121632A-3BIG
Description  8M x 16 Bit x 4 Banks DDR II SDRAM
Download  59 Pages
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Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

M14D5121632A-3BIG Datasheet(HTML) 8 Page - Elite Semiconductor Memory Technology Inc.

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ESMT
M14D5121632A
Operation Temperature Condition (TC) -40
°C~95°C
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
8/59
AC Operation Conditions & Timing Specification
AC Operation Conditions
-3
Parameter
Symbol
Min.
Max.
Unit
Note
Input High (Logic 1) Voltage
VIH(AC)
VREF + 0.2
V
Input Low (Logic 0) Voltage
VIL(AC)
VREF - 0.2
V
Input Differential Voltage
VID(AC)
0.5
VDDQ+0.6
V
1
Input Crossing Point Voltage
VIX(AC)
0.5 x VDDQ - 0.175
0.5 x VDDQ + 0.175
V
2
Output Crossing Point Voltage VOX(AC)
0.5 x VDDQ - 0.125
0.5 x VDDQ + 0.125
V
2
Note:
1. VID(AC) specifies the input differential voltage |VTR – VCP| required for switching, where VTR is the true input signal (such
as CLK,DQS) and VCP is the complementary input signal (such as CLK ,
). The minimum value is equal to VIH(AC) –
VIL(AC).
2. The typical value of VIX / VOX(AC) is expected to be about 0.5 x VDDQ of the transmitting device and VIX / VOX(AC) is
expected to track variations in VDDQ. VIX / VOX(AC) indicates the voltage at which differential input / output signals must
cross.
Input / Output Capacitance
Parameter
Symbol
Min.
Max.
Unit Note
Input capacitance
(A0~A12, BA0~BA1, CKE, CS , RAS , CAS , WE , ODT)
-3
CIN1
1.0
2.0
pF
1
Input capacitance (CLK, CLK )
CIN2
1.0
2.0
pF
1
DQS,
& Data input/output capacitance
-3
CI / O
2.5
3.5
pF
2
Input capacitance (DM)
-3
CIN3
2.5
3.5
pF
2
Note: 1. Capacitance delta is 0.25 pF.
2. Capacitance delta is 0.5 pF.


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