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STM32F101X4 Datasheet(PDF) 50 Page - STMicroelectronics

Part No. STM32F101X4
Description  Low-density access line, ARM-based 32-bit MCU with 16 or 32 KB Flash, 5 timers, ADC and 4 communication interfaces
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F101X4 Datasheet(HTML) 50 Page - STMicroelectronics

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Electrical characteristics
STM32F101x4, STM32F101x6
50/74
Doc ID 15058 Rev 3
5.3.12
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 33 are derived from tests
performed under the conditions summarized in Table 8. All I/Os are CMOS and TTL
compliant.
All I/Os are CMOS and TTL compliant (no software configuration required), their
characteristics consider the most strict CMOS-technology or TTL parameters:
For VIH:
–if VDD is in the [2.00 V - 3.08 V] range: CMOS characteristics but TTL included
–if VDD is in the [3.08 V - 3.60 V] range: TTL characteristics but CMOS included
For VIL:
–if VDD is in the [2.00 V - 2.28 V] range: TTL characteristics but CMOS included
–if VDD is in the [2.28 V - 3.60 V] range: CMOS characteristics but TTL included
Table 33.
I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Input low level voltage
TTL ports
–0.5
0.8
V
VIH
Standard IO input high level
voltage
2VDD+0.5
IO FT(1) input high level voltage
1.
FT = Five-volt tolerant.
25.5V
VIL
Input low level voltage
CMOS ports
–0.5
0.35 VDD
V
VIH
Input high level voltage
0.65 VDD
VDD+0.5
Vhys
Standard IO Schmitt trigger
voltage hysteresis(2)
2.
Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in
production.
200
mV
IO FT Schmitt trigger voltage
hysteresis(2)
5% VDD
(3)
mV
Ilkg
Input leakage current (3)
3.
With a minimum of 100 mV.
VSS VIN VDD
Standard I/Os
1
µA
VIN = 5 V
I/O FT
3
RPU
Weak pull-up equivalent
resistor(4)
4.
Leakage could be higher than max. if negative current is injected on adjacent pins.
VIN VSS
30
40
50
k
RPD
Weak pull-down equivalent
resistor(5)
5.
Pull-up and pull-down resistors are designed with a true resistance in series with a switchable
PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimum (~10% order)
.
VIN VDD
30
40
50
k
CIO
I/O pin capacitance
5
pF


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