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MB82DP02183F-65L Datasheet(PDF) 10 Page - Fujitsu Component Limited.

Part # MB82DP02183F-65L
Description  MEMORY Mobile FCRAM CMOS 32 M Bit (2 M word x 16 bit) Mobile Phone Application Specific Memory
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Manufacturer  FUJITSU [Fujitsu Component Limited.]
Direct Link  http://edevice.fujitsu.com/fmd/en/index.html
Logo FUJITSU - Fujitsu Component Limited.

MB82DP02183F-65L Datasheet(HTML) 10 Page - Fujitsu Component Limited.

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MB82DP02183F-65L
10
DS05-11460-1E
(3) Power Down Parameters
(Under recommended operating conditions unless otherwise noted)
*1 : Applicable also to power-up.
*2 : Applicable when Partial mode is set.
(4) Other Timing Parameters
(Under recommended operating conditions unless otherwise noted)
*1 : Some data might be written into any address location if tCHWX(Min) is not satisfied.
*2 : The Input Transition Time (tT) at AC testing is 5 ns as shown in below. If actual tT is longer than 5 ns, it may
violate AC specification of some timing parameters.
(5) AC Test Conditions
Parameter
Symbol
Value
Unit
Notes
Min
Max
CE2 Low Setup Time for Power Down Entry
tCSP
10
ns
CE2 Low Hold Time after Power Down Entry
tC2LP
65
ns
CE1 High Hold Time following CE2 High
after Power Down Exit [Sleep mode only]
tCHH
300
⎯μs*1
CE1 High Hold Time following CE2 High
after Power Down Exit [not in Sleep mode]
tCHHP
65
ns
*2
CE1 High Setup Time following CE2 High
after Power Down Exit
tCHS
0
ns
*1
Parameter
Symbol
Value
Unit
Notes
Min
Max
CE1 High to OE Invalid Time for Standby Entry
tCHOX
10
ns
CE1 High to WE Invalid Time for Standby Entry
tCHWX
10
ns
*1
CE2 Low Hold Time after Power-up
tC2LH
50
⎯μs
CE1 High Hold Time following CE2 High after Power-up
tCHH
300
⎯μs
Input Transition Time
tT
125
ns
*2
Parameter
Symbol
Test Setup
Value
Unit
Input High Voltage
VIH
VDD
× 0.8
V
Input Low Voltage
VIL
VDD
× 0.2
V
Input Timing Measurement Level
VREF
VDD
× 0.5
V
Input Transition Time
tT
Between VIL and VIH
5ns
VDD
VSS
0.1
μF
50 pF
Output
Device under
Test
• AC Measurement Output Load Circuit


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