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CM200TL-24NF Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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CM200TL-24NF Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 5 page Feb. 2009 2 IC = 20mA, VCE = 10V Tj = 25 °C Tj = 125 °C VCE = 10V VGE = 0V VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V IC = 200A, VGE = 15V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = ±15V RG = 1.6 Ω, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to heat sink, Thermal compound Applied (1/6 module)*2 1200 ±20 200 400 200 400 1160 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 750 MITSUBISHI IGBT MODULES CM200TL-24NF HIGH POWER SWITCHING USE V V A A A A W °C °C Vrms N • m N • m g 1 0.5 3.1 — 35 3 0.68 — 130 70 400 350 150 — 3.8 0.11 0.17 — 21 mA µA nF nF nF nC ns ns ns ns µC V K/W K/W K/W Ω — — 2.1 2.4 — — — 1000 — — — — — 9 — — — 0.051 — — — — — — — — — — — — — — — — — — — 1.6 7V V 68 ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Symbol Parameter VGE(th) VCE(sat) *1 : Case temperature (Tc) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short DC, TC = 72 °C*1 Pulse (Note 2) Pulse (Note 2) TC = 25 °C Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Unit Typ. Limits Min. Max. ABSOLUTE MAXIMUM RATINGS (Tj = 25 °C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tj = 25 °C, unless otherwise specified) Test conditions |
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