Feb. 2009

2

°C

°C

±15V

Ω, Inductive load

1200

±20

200

400

200

400

1160

–40 ~ +150

–40 ~ +125

2500

2.5 ~ 3.5

2.5 ~ 3.5

750

MITSUBISHI IGBT MODULES

CM200TL-24NF

HIGH POWER SWITCHING USE

V

V

A

A

A

A

W

°C

°C

Vrms

N • m

N • m

g

1

0.5

3.1

—

35

3

0.68

—

130

70

400

350

150

—

3.8

0.11

0.17

—

21

mA

µA

nF

nF

nF

nC

ns

ns

ns

ns

µC

V

K/W

K/W

K/W

Ω

—

—

2.1

2.4

—

—

—

1000

—

—

—

—

—

9

—

—

—

0.051

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

1.6

7V

V

68

ns

Collector cutoff current

Gate leakage current

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Reverse recovery time

Reverse recovery charge

Emitter-collector voltage

Contact thermal resistance

External gate resistance

Gate-emitter threshold voltage

Collector-emitter saturation voltage

Thermal resistance

Symbol

Parameter

°C.

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Collector-emitter voltage

Gate-emitter voltage

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Weight

G-E Short

C-E Short

Pulse

(Note 2)

Pulse

(Note 2)

°C

Terminals to base plate, f = 60Hz, AC 1 minute

Main terminals M5 screw

Mounting M5 screw

Typical value

Symbol

Parameter

Collector current

Emitter current

Torque strength

Conditions

Unit

Ratings

—

—

—

Unit

Typ.

Limits

Min.

Max.

°C, unless otherwise specified)

°C, unless otherwise specified)

Test conditions