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CM300DU-24H Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part # CM300DU-24H
Description  IGBT MODULES HIGH POWER SWITCHING USE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CM300DU-24H Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

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Feb. 2009
2
MITSUBISHI IGBT MODULES
CM300DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
V
V
VCE = VCES, VGE = 0V
±VGE = VGES, VCE = 0V
Tj = 25
°C
Tj = 125
°C
VCC = 600V, IC = 300A, VGE = 15V
VCC = 600V, IC = 300A
VGE =
±15V
RG = 1.0
Resistive load
IE = 300A, VGE = 0V
IE = 300A,
die / dt = –600A /
µs
Junction to case, IGBT part (Per 1/2 module)
Junction to case, FWDi part (Per 1/2 module)
Case to heat sink, conductive grease applied
(Per 1/2 module)
(Note 6)
IC = 30mA, VCE = 10V
IC = 300A, VGE = 15V
(Note 4)
VCE = 10V
VGE = 0V
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
(Note 5)
Contact thermal resistance
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
VGE = 0V
VCE = 0V
TC = 25
°C
Pulse
(Note 1)
TC = 25
°C
Pulse
(Note 1)
TC = 25
°C
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Collector current
Emitter current
1200
±20
300
600
300
600
1130
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
580
MAXIMUM RATINGS (Tj = 25
°C, unless otherwise specified)
Symbol
Item
Conditions
Unit
Ratings
V
V
A
A
A
A
W
°C
°C
Vrms
N·m
N·m
g
VCES
VGES
IC
ICM
IE
(Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Tstg
Viso
Min
Typ
Max
1
0.5
3.7
45
15
9
200
300
350
350
3.2
300
0.11
0.18
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
K/W
K/W
K/W
2.9
2.85
1125
1.65
0.02
ICES
IGES
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC(Note 2)
trr
(Note 2)
Qrr (Note 2)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
ELECTRICAL CHARACTERISTICS (Tj = 25
°C, unless otherwise specified)
Symbol
Item
Test Conditions
VGE(th)
VCE(sat)
Limits
Unit
6
4.5
Note 1. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150
°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Case temperature (TC) measured point is shown in page OUTLINE DRAWING.
7.5
6. Typical value is measured by using thermally conductive grease of
λ = 0.9[W/(m • K)].


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