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CM400DY-12NF Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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CM400DY-12NF Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 4 page Feb. 2009 2 VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V Tj = 25 °C Tj = 125 °C VCC = 300V, IC = 400A, VGE = 15V VCC = 300V, IC = 400A VGE = ±15V RG = 3.1 Ω, Inductive load IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) Case temperature measured point is just under the chips IC = 40mA, VCE = 10V IC = 400A, VGE = 15V VCE = 10V VGE = 0V 600 ±20 400 800 400 800 1130 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 MITSUBISHI IGBT MODULES CM400DY-12NF HIGH POWER SWITCHING USE V V A A A A W °C °C Vrms N • m N • m g 1 0.5 2.2 — 60 7.3 2.4 — 300 200 450 300 250 — 2.6 0.11 0.19 — 0.066*3 16 mA µA nF nF nF nC ns ns ns ns µC V K/W K/W K/W K/W Ω — — 1.7 1.7 — — — 1600 — — — — — 6.8 — — — 0.04 — — — — — — — — — — — — — — — — — — — — — 1.6 6V V 5 7.5 ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance*1 ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Symbol Parameter VGE(th) VCE(sat) *1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : Case temperature (Tc’) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150 °C. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short DC, TC’ = 92 °C*3 Pulse (Note 2) Pulse (Note 2) TC = 25 °C Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Unit Typ. Limits Min. Max. MAXIMUM RATINGS (Tj = 25 °C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tj = 25 °C, unless otherwise specified) Test conditions |
Similar Part No. - CM400DY-12NF_09 |
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Similar Description - CM400DY-12NF_09 |
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