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CM400DY-12NF Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part # CM400DY-12NF
Description  IGBT MODULES HIGH POWER SWITCHING USE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CM400DY-12NF Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

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Feb. 2009
2
VCE = VCES, VGE = 0V
±VGE = VGES, VCE = 0V
Tj = 25
°C
Tj = 125
°C
VCC = 300V, IC = 400A, VGE = 15V
VCC = 300V, IC = 400A
VGE =
±15V
RG = 3.1
Ω, Inductive load
IE = 400A
IE = 400A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound Applied*2 (1/2 module)
Case temperature measured point is just under the chips
IC = 40mA, VCE = 10V
IC = 400A, VGE = 15V
VCE = 10V
VGE = 0V
600
±20
400
800
400
800
1130
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
400
MITSUBISHI IGBT MODULES
CM400DY-12NF
HIGH POWER SWITCHING USE
V
V
A
A
A
A
W
°C
°C
Vrms
N • m
N • m
g
1
0.5
2.2
60
7.3
2.4
300
200
450
300
250
2.6
0.11
0.19
0.066*3
16
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
µC
V
K/W
K/W
K/W
K/W
1.7
1.7
1600
6.8
0.04
1.6
6V
V
5
7.5
ns
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
External gate resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance*1
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
RG
Symbol
Parameter
VGE(th)
VCE(sat)
*1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
*3 : Case temperature (Tc’) measured point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150
°C.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
DC, TC’ = 92
°C*3
Pulse
(Note 2)
Pulse
(Note 2)
TC = 25
°C
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Symbol
Parameter
Collector current
Emitter current
Torque strength
Conditions
Unit
Ratings
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Unit
Typ.
Limits
Min.
Max.
MAXIMUM RATINGS (Tj = 25
°C, unless otherwise specified)
ELECTRICAL CHARACTERISTICS (Tj = 25
°C, unless otherwise specified)
Test conditions


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