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MGF0805A Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor |
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MGF0805A Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor |
5 / 8 page MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] Mitsubishi Electric Sept. / 2009 5 ID EVM 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 15 20 25 30 35 Pout (dBm ) 0 100 200 300 400 500 600 700 Bias condition: VD = 10 V, IDQ = 400 mA Modulation signal: IEEE.802.16 WiMAX A, Downlink, 64QAM3/4 Example of Circuit Schematic and Characteristics : f = 2.6 GHz Output Input 1pF Z23 Z24 1.5pF 1.5pF MGF0805A +VD -VG 51 Ω 1000pF 20pF 20pF 20pF 20pF Z21 Z22 Z25 Z11 Z12 Z13 Z14 Z15 Z26 4.7uF 100 Ω 2pF 2pF Z11 to Z26 : Microstrip line ( L × W, Unit: mm ) Z11 : 1.0 × 0.9 Z14 : 3.0 × 0.9 Z22 : 2.1 × 0.9 Z25 : 3.0 × 0.9 Z12 : 0.8 × 0.9 Z15 : 17.6 × 0.5 Z23 : 3.2 × 0.9 Z26 : 17.6 × 0.5 Z13 : 14.5 × 0.9 Z21 : 1.0 × 0.9 Z24 : 10.0 × 0.9 PCB : BT Resin, εr = 3.4, Substrate thickness = 0.4 mm |
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