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MCP4241T Datasheet(PDF) 3 Page - Microchip Technology |
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MCP4241T Datasheet(HTML) 3 Page - Microchip Technology |
3 / 88 page © 2008 Microchip Technology Inc. DS22059B-page 3 MCP414X/416X/424X/426X 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Voltage on VDD with respect to VSS ............... -0.6V to +7.0V Voltage on CS, SCK, SDI, SDI/SDO, WP, and SHDN with respect to VSS ...................................... -0.6V to 12.5V Voltage on all other pins (PxA, PxW, PxB, and SDO) with respect to VSS ............................ -0.3V to VDD + 0.3V Input clamp current, IIK (VI < 0, VI > VDD, VI > VPP ON HV pins) ......................±20 mA Output clamp current, IOK (VO < 0 or VO > VDD) ..................................................±20 mA Maximum output current sunk by any Output pin ......................................................................................25 mA Maximum output current sourced by any Output pin ......................................................................................25 mA Maximum current out of VSS pin .................................100 mA Maximum current into VDD pin ....................................100 mA Maximum current into PXA, PXW & PXB pins ............±2.5 mA Storage temperature ....................................-65°C to +150°C Ambient temperature with power applied .....................................................................-40°C to +125°C Total power dissipation (Note 1) ................................400 mW Soldering temperature of leads (10 seconds) ............. +300°C ESD protection on all pins .................................. ≥ 4 kV (HBM), .......................................................................... ≥ 300V (MM) Maximum Junction Temperature (TJ) ......................... +150°C † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD - ∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOI x IOL) |
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