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23K640T-I/P Datasheet(PDF) 2 Page - Microchip Technology

Part # 23K640T-I/P
Description  64K SPI Bus Low-Power Serial SRAM
Download  26 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

23K640T-I/P Datasheet(HTML) 2 Page - Microchip Technology

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23A640/23K640
DS22126C-page 2
© 2009 Microchip Technology Inc.
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (†)
VCC.............................................................................................................................................................................4.5V
All inputs and outputs w.r.t. VSS ......................................................................................................... -0.3V to VCC +0.3V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-40°C to 125°C
ESD protection on all pins ........................................................................................................................................... 2kV
TABLE 1-1:
DC CHARACTERISTICS
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
DC CHARACTERISTICS
Industrial (I):
TA = -40°C to +85°C
Automotive (E): TA = -40°C to +125°C
Param.
No.
Sym.
Characteristic
Min.
Typ(1)
Max.
Units
Test Conditions
D001
VCC
Supply voltage
1.5
1.95
V
23A640 (I-Temp)
D001
VCC
Supply voltage
2.7
3.6
V
23K640 (I, E-Temp)
D002
VIH
High-level input
voltage
.7 VCC
—VCC
+0.3
V
D003
VIL
Low-level input
voltage
-0.3
0.2xVCC
V
D004
VOL
Low-level output
voltage
——
0.2
V
IOL = 1 mA
D005
VOH
High-level output
voltage
VCC -0.5
V
IOH = -400
μA
D006
ILI
Input leakage
current
——
±0.5
μACS = VCC, VIN = VSS OR VCC
D007
ILO
Output leakage
current
——
±0.5
μACS = VCC, VOUT = VSS OR VCC
D008
ICC Read
Operating current
3
6
10
mA
mA
mA
FCLK = 1 MHz; SO = O
FCLK = 10 MHz; SO = O
FCLK = 20 MHz; SO = O
D009
ICCS
Standby current
200
1
5
500
4
10
nA
μA
μA
CS = VCC = 1.8V, Inputs tied to VCC
or VSS
CS = VCC = 3.6V, Inputs tied to VCC
or VSS
CS = VCC = 3.6V, Inputs tied to VCC
or VSS @ 125°C
D010
CINT
Input capacitance
7
pF
VCC = 0V, f = 1 MHz, Ta = 25°C
(Note 1)
D011
VDR
RAM data retention
voltage (2)
—1.2
V
Note 1:
This parameter is periodically sampled and not 100% tested. Typical measurements taken at room
temperature (25°C).
2:
This is the limit to which VDD can be lowered without losing RAM data. This parameter is periodically
sampled and not 100% tested.


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