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TK15D60U Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TK15D60U Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page TK15D60U 2008-07-02 4 200V 6 0 30 12 VDS VDD = 100V VGS 400V 18 24 0 20 8 4 12 16 0 500 200 100 300 400 0 5 1 3 2 4 −40 −80 200 0 80 120 40 160 Coss 1 0.1 100 10 Ciss Crss 1 10000 100 10 1000 VGS = 0 V 1 3 10,15 5 0.1 100 10 1 0.4 00.8 1.2 ID = 4 A 15 7.5 0 1 0.2 0.4 0.8 −80 −40 200 0 80 120 40 0.6 160 Drain −source voltage VDS (V) IDR − VDS Drain −source voltage VDS (V) C – VDS Case temperature Tc (°C) Vth − Tc Case temperature Tc (°C) PD − Tc Common source VGS = 10 V Pulse test Total gate charge Qg (nC) Dynamic input/output characteristics Common source VDS = 10 V ID = 1 mA Pulse test Common source Tc = 25°C Pulse test RDS (ON) – Tc Case temperature Tc (°C) Common source VGS = 0 V f = 1 MHz Tc = 25°C Common source ID = 15 A Tc = 25°C Pulse test 200 40 120 80 160 0 0 80 120 200 40 160 |
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