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TPC6501 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # TPC6501
Description  Transistor Silicon NPN Epitaxial Type
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC6501 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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TPC6501
2006-11-10
3
Base-emitter voltage VBE (V)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
hFE – IC
Collector current IC (A)
VCE (sat) – IC
Collector current IC (A)
VBE (sat) – IC
IC – VBE
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0.4
0.8
1.2
1.6
2.0
2.4
Common emitter
Ta
= 25°C
Single nonrepetitive
l
IB = 2 mA
0
4
6
8
10
20
30
40
60
10000
0.001
1000
100
10
0.01
0.1
1
10
Ta
= 100°C
25
−55
Common emitter
VCE = 2 V
Single nonrepetitive
pulse
0.001
1
0.1
0.01
0.001
0.01
0.1
1
10
25
−55
Ta
= 100°C
Common emitter
IC/IB = 50
Single nonrepetitive
pulse
0.001
0.01
0.1
1
10
10
0.1
1
Common emitter
IC/IB = 50
Single nonrepetitive
pulse
Ta
= 100°C
25
−55
0
0
0.4
0.8
1.2
1.6
0.4
0.8
1.2
1.6
2.0
Common emitter
VCE = 2 V
Single nonrepetitive
pulse
25
−55
Ta
= 100°C


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