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TPCA8040-H Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TPCA8040-H Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPCA8040-H 2008-10-17 5 20 10 30 0 0 5 25 VDD = 6 V VDS 24 12 15 8 4 12 0 10 20 0 0.5 1.5 −80 −40 0 40 80 120 160 2.5 1.0 2.0 10 0.1 100 1000 10000 1 10 100 Ciss Coss Crss 0 1 −0.2 100 −0.6 −0.8 −1.0 VGS = 0 V 10 4.5 1 3 −0.4 10 160 −40 0 40 80 120 −80 12 4 0 VGS = 10 V 8 VGS = 4.5 V 16 ID = 5.8, 11.5, 23 A ID = 5.8, 11.5, 23 A Drain-source voltage VDS (V) Capacitance – VDS Drain-source voltage VDS (V) IDR – VDS Ambient temperature Ta (°C) Vth – Ta Ambient temperature Ta (°C) RDS (ON) – Ta Total gate charge Qg (nC) Dynamic input/output characteristics Common source Ta = 25°C Pulse test Common source VGS = 0 V f = 1 MHz Ta = 25°C Common source VDS = 10 V ID = 0.2 mA Pulse test Common source Pulse test Common source ID = 23 A Ta = 25°C Pulse test |
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