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TPCM8006 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # TPCM8006
Description  Field Effect Transistor Silicon N-Channel MOS Type (U-MOS??
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCM8006 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TPCM8006
2008-05-23
2
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
(Tc = 25
°C)
Rth (ch-c)
4.17
°C/W
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2a)
Rth (ch-a)
54.3
°C/W
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2b)
Rth (ch-a)
125
°C/W
Marking (Note 5)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 100 μH, IAR = 25 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5:
(a)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
* Weekly code: (Three digits)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
M8006
Lot No.
Part No. (or abbreviation code)


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