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TPCM8006 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TPCM8006 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 7 page TPCM8006 2008-05-23 2 Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case (Tc = 25 °C) Rth (ch-c) 4.17 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 54.3 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 °C/W Marking (Note 5) Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 100 μH, IAR = 25 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) ※ M8006 Lot No. Part No. (or abbreviation code) |
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Similar Description - TPCM8006 |
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