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IS42S16400F-7BL Datasheet(PDF) 1 Page - Integrated Silicon Solution, Inc

Part # IS42S16400F-7BL
Description  1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS42S16400F-7BL Datasheet(HTML) 1 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com
1
Rev. F
11/09/09
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
IS42S16400F
IS45S16400F
FEATURES
• Clock frequency: 200, 166, 143, 133 MHz
• Fullysynchronous;allsignalsreferencedtoa
positive clock edge
• Internalbankforhidingrowaccess/precharge
• Single3.3Vpowersupply
• LVTTLinterface
• Programmableburstlength
– (1, 2, 4, 8, full page)
• Programmableburstsequence:
Sequential/Interleave
• Selfrefreshmodes
• Autorefresh(CBR)
• 4096refreshcyclesevery64ms(Com,Ind,A1
grade) or 16ms (A2 grade)
• Randomcolumnaddresseveryclockcycle
• ProgrammableCAS latency (2, 3 clocks)
• Burstread/writeandburstread/singlewrite
operations capability
• Burstterminationbyburststopandprecharge
command
OPTIONS
• Package:
54-pinTSOPII
54-ballFBGA(8mmx8mm)
• OperatingTemperatureRange
Commercial (0oC to +70oC)
Industrial (-40oC to +85oC)
AutomotiveGradeA1(-40oC to +85oC)
AutomotiveGradeA2(-40oC to +105oC)
OVERVIEW
ISSI's64MbSynchronousDRAMisorganizedas1,048,576
bits x 16-bit x 4-bank for improved performance. The
synchronous DRAMs achieve high-speed data transfer
using pipeline architecture. All inputs and outputs signals
refer to the rising edge of the clock input.
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT)
SYNCHRONOUS DYNAMIC RAM
NOVEMBER 2009
KEY TIMING PARAMETERS
Parameter
-5
-6
-7
Unit
ClkCycleTime
CAS
Latency=3
5
6
7
ns
CAS
Latency=2
7.5
7.5
7.5
ns
ClkFrequency
CAS
Latency=3
200
166
143
Mhz
CAS
Latency=2
133
133
133
Mhz
AccessTimefromClock
CAS
Latency=3
5
5.4
5.4
ns
CAS
Latency=2
6
6
6
ns
Parameter
4M x 16
Configuration
1M x 16 x 4
banks
Refresh Count
Com./Ind.
A1
A2
4K/64ms
4K/64ms
4K/16ms
Row Addresses
A0-A11
Column Addresses
A0-A7
Bank Address Pins
BA0, BA1
Auto Precharge Pins
A10/AP
ADDRESS TABLE


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