4

Integrated Silicon Solution, Inc. — www.issi.com

Rev. B

03/04/2008

IS61C5128AL/AS

IS64C5128AL/AS

Symbol

Parameter

Conditions

Max.

Unit

Input Capacitance

5

pF

Output Capacitance

7

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

Symbol Parameter

Test Conditions

Min.

Max.

Unit

Output HIGH Voltage

2.4

—

V

Output LOW Voltage

—

0.4

V

Input HIGH Voltage

2.2

V

–0.3

0.8

V

Input Leakage

GND

Com.

–1

1

µA

Ind.

–2

2

Auto.

–5

5

Output Leakage

GND

Com.

–1

1

µA

Outputs Disabled

Ind.

–2

2

Auto.

–5

5

Note:

TRUTH TABLE

I/O PIN

Mode

WE

WE

WE

WE

WE

CE

CE

CE

CE

CE

OE

OE

OE

OE

OE

I/O0-I/O7

Not Selected

X

H

X

High-Z

Output Disabled

H

L

H

High-Z

Read

H

L

L

Write

L

L

X

Symbol

Parameter

Value

Unit

Terminal Voltage with Respect to GND

–0.5 to +7.0

V

Storage Temperature

–65 to +150

°C

Power Dissipation

1.5

W

DC Output Current (LOW)

20

mA

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at these or

any other conditions above those indicated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.