IS64WV51216BLL-10CTA3 datasheet(8/20 Pages) ISSI

Part #	IS64WV51216BLL-10CTA3

Description	512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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8 / 20 page

8

Integrated Silicon Solution, Inc. — www.issi.com

Rev. F

10/01/09

IS61WV51216ALL

IS61WV51216BLL

IS64WV51216BLL

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

-8

-10

-20

Symbol Parameter

Test Conditions

Min.

Max.

Min.

Max.

Min.

Max.

Unit

ICC

VDD Dynamic Operating

VDD = Max.,

Com.

—

110

—

90

—

50

mA

Supply Current

IOUT = 0 mA, f = fMAX

Ind.

—

115

—

95

—

60

Auto.

—

140

—

100

typ.(2)

60

ICC1

Operating

VDD = Max.,

Com.

—

85

—

85

—

45

mA

Supply Current

IOUT = 0 mA, f = 0

Ind.

—

90

—

90

—

55

Auto.

—

110

—

90

ISB1

TTL Standby Current

VDD = Max.,

Com.

—

30

—

30

—

30

mA

(TTL Inputs)

VIN = VIH or VIL

Ind.

—

35

—

35

—

35

CE

≥ VIH, f = 0

Auto.

—

70

—

70

ISB2

CMOS Standby

VDD = Max.,

Com.

—

20

—

20

—

15

mA

Current (CMOS Inputs)

CE

≥ VDD – 0.2V,

Ind.

—

25

—

25

—

20

VIN

≥ VDD – 0.2V, or

Auto.

—

60

—

60

VIN

≤ 0.2V, f = 0

typ.(2)

4

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at VDD = 3.0V, TA = 25oC and not 100% tested.

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