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CSD16301Q2 Datasheet(PDF) 1 Page - Texas Instruments |
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CSD16301Q2 Datasheet(HTML) 1 Page - Texas Instruments |
1 / 10 page 1 D 2 D D 3 D 4 D 5 G 6 S S P0108-01 VGS − Gate to Source Voltage − V 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 7 8 9 10 G006 ID = 4A TC = 125°C TC = 25°C Qg − Gate Charge − nC 0 1 2 3 4 5 6 7 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 G003 ID = 4A VDS = 12.5V CSD16301Q2 www.ti.com.............................................................................................................................................................................................. SLPS235 – OCTOBER 2009 N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16301Q2 1 FEATURES Table 1. PRODUCT SUMMARY 2 • Ultralow Qg and Qgd • Low Thermal Resistance VDS Drain to Source Voltage 25 V Qg Gate Charge Total (–4.5V) 2 nC • Pb Free Terminal Plating Qgd Gate Charge Gate to Drain 0.4 nC • RoHS Compliant VGS = 3V 27 m Ω • Halogen Free RDS(on) Drain to Source On Resistance VGS = 4.5V 23 m Ω • SON 2-mm × 2-mm Plastic Package VGS = 8V 19 m Ω VGS(th) Threshold Voltage 1.1 V APPLICATIONS • DC-DC Converters Text and br Added for Spacing • Battery and Load Management Applications ORDERING INFORMATION Device Package Media Qty Ship DESCRIPTION SON 2-mm × 2-mm 13-Inch Tape and CSD16301Q2 3000 Plastic Package Reel Reel The NexFET™ power MOSFET has been designed to minimize losses in power conversion and load Text and br Added for Spacing management applications. The SON 2x2 offers ABSOLUTE MAXIMUM RATINGS excellent thermal performance for the size of the package. TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 25 V Top View VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 5 A ID Continuous Drain Current(1) 5 A IDM Pulsed Drain Current, TA = 25°C (2) 20 A PD Power Dissipation(1) 2.3 W TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Avalanche Energy, single pulse EAS 10 mJ ID = 14A, L = 0.1mH, RG = 25Ω (1) Packaged Limited. (2) Pulse duration 10 μs, duty cycle ≤2% RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2009, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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