1

D

2

D

D

3

D

4

D

5

G

6

S

S

P0108-01

0

10

20

30

40

50

60

70

80

0

1

2

3

4

5

6

7

8

9

10

G006

0

1

2

3

4

5

6

7

8

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

G003

CSD16301Q2

N-Channel NexFET™ Power MOSFETs

Check for Samples: CSD16301Q2

1

FEATURES

Table 1. PRODUCT SUMMARY

2

•

•

Low Thermal Resistance

Drain to Source Voltage

25

V

Gate Charge Total (–4.5V)

2

nC

•

Pb Free Terminal Plating

Gate Charge Gate to Drain

0.4

nC

•

RoHS Compliant

27

m

Ω

•

Halogen Free

Drain to Source On Resistance

23

m

Ω

•

SON 2-mm × 2-mm Plastic Package

19

m

Ω

Threshold Voltage

1.1

V

APPLICATIONS

•

DC-DC Converters

Text and br Added for Spacing

•

Battery and Load Management Applications

ORDERING INFORMATION

Device

Package

Media

Qty

Ship

DESCRIPTION

SON 2-mm × 2-mm

13-Inch

Tape and

CSD16301Q2

3000

Plastic Package

Reel

Reel

The NexFET™ power MOSFET has been designed

to minimize losses in power conversion and load

Text and br Added for Spacing

management applications. The SON 2x2 offers

ABSOLUTE MAXIMUM RATINGS

excellent thermal performance for the size of the

package.

VALUE

UNIT

Drain to Source Voltage

25

V

Top View

Gate to Source Voltage

+10 / –8

V

5

A

5

A

(2)

20

A

2.3

W

Operating Junction and Storage

–55 to 150

°C

Temperature Range

Avalanche Energy, single pulse

10

mJ

(1)

Packaged Limited.

(2)

Pulse duration 10

μs, duty cycle ≤2%

GATE CHARGE

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

NexFET is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Copyright © 2009, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.