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RJK0380DPA Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # RJK0380DPA
Description  Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0380DPA Datasheet(HTML) 5 Page - Renesas Technology Corp

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RJK0380DPA
Preliminary
REJ03G1827-0210 Rev.2.10 Sep 29, 2009
Page 5 of 6
D. U. T
Rg
IAP
Monitor
VDS
Monitor
VDD
50
Ω
Vin
15 V
0
ID
VDS
IAP
V(BR)DSS
L
VDD
EAR =
L
• I
AP
2
•
2
1
VDSS
VDSS – VDD
Avalanche Test Circuit
Avalanche Waveform
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width
Vin Monitor
D.U.T.
Vin
10 V
RL
VDS
= 10 V
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
90%
10%
tf
Switching Time Test Circuit
Switching Time Waveform
Rg
3
1
0.3
0.1
0.03
0.01
1 m
10 m
100 m
1
10
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
10
μ
100
μ
Tc = 25°C
PDM
PW
T
D =
PW
T
θch – c (t) = γ s (t) • θch – c
θch – c = 2.5°C/W, Tc = 25°C


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