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BC639G Datasheet(PDF) 3 Page - ON Semiconductor

Part # BC639G
Description  High Current Transistors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BC639G Datasheet(HTML) 3 Page - ON Semiconductor

  BC639G Datasheet HTML 1Page - ON Semiconductor BC639G Datasheet HTML 2Page - ON Semiconductor BC639G Datasheet HTML 3Page - ON Semiconductor BC639G Datasheet HTML 4Page - ON Semiconductor  
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BC637, BC639, BC639−16
http://onsemi.com
3
1000
1
2
5
10
20
50
100
200
500
100
1
2
3 4 5
7 10
20
30 40 50 70
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
BC635
BC637
BC639
PD TA 25°C
PD TC 25°C
SOA = 1S
PD TC 25°C
PD TA 25°C
500
200
100
50
20
1
3
5
10
30 50 100
300 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
VCE = 2 V
500
300
100
50
20
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 3. Current−Gain — Bandwidth Product
VCE = 2 V
1
0.8
0.6
0.4
0.2
0
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 4. “Saturation” and “On” Voltages
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 2 V
VCE(sat) @ IC/IB = 10
−0.2
−1.0
−2.2
−1.6
1
3
5
10
30 50
100
300 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
VCE = 2 VOLTS
DT = 0°C to +100°C
qV for VBE


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